Multilayered barium titanate thin films by sol-gel method for nonvolatile memory application

Yu Chi Chang, Ren Yang Xue, Yeong-Her Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The modification of multispin casting multilayered barium titanate (BTO) thin films on indium tin oxide (ITO)/glass substrate without doping other elements is adopted to improve the memory performance. The X-ray photoelectron spectroscopy analysis reveals the concentration of oxygen vacancies can be reduced by the increasing number of the BTO layer. Mechanisms of conducting paths relating to the concentration of oxygen vacancies will also be explicated. The memory devices showed typical bipolar resistive switching behavior and an ON/OFF ratio of over 106. The memory devices also exhibited outstanding uniformity. A retention time of over 105 s without fluctuation at room temperature and 85 °C can be achieved.

Original languageEnglish
Article number6949144
Pages (from-to)4090-4097
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume61
Issue number12
DOIs
Publication statusPublished - 2014 Dec 1

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Barium titanate
Sol-gel process
Oxygen vacancies
Data storage equipment
Thin films
ITO glass
Chemical elements
Casting
X ray photoelectron spectroscopy
Doping (additives)
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Multilayered barium titanate thin films by sol-gel method for nonvolatile memory application. / Chang, Yu Chi; Xue, Ren Yang; Wang, Yeong-Her.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 12, 6949144, 01.12.2014, p. 4090-4097.

Research output: Contribution to journalArticle

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