In this paper, a new multiple negativedifferential-resistance (MNDR) device based on a nietalinsulator-seniiconductor-insulator-rnetal (MISIM)-like structure with the step-compositioned InGai z As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviors and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristics are observed at -105 °C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has the good potentiality in multiple-valued logic applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering