Multiple negative-differential-resistance (MNDR) phenomena of a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositioned inxgai_as quantum wells

Wen Chau Liu, Lib Wen Laih, Shiou Ying Cheng, Wen Lung Chang, Wei Chou Wang, Jing Yuh Chen, Po Hung Lin

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

In this paper, a new multiple negativedifferential-resistance (MNDR) device based on a nietalinsulator-seniiconductor-insulator-rnetal (MISIM)-like structure with the step-compositioned InGai z As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviors and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristics are observed at -105 °C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has the good potentiality in multiple-valued logic applications.

Original languageEnglish
Pages (from-to)373-379
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume45
Issue number2
DOIs
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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