Multiple negative-differential-resistance (NDR) of InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT)

Wen Chau Liu, Jung Hui Tsai, Wen Shiung Lour, Lih Wen Laih, Kong Beng Thei, Cheng Zu Wu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

An interesting multiple S-shaped negative-differential-resistance (NDR) phenomenon is observed for an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) under the inverted operation mode. This behavior is resulted from a sequential avalanche multiplication and two-stage barrier lowering effect. The two-stage barrier lowering effect is assumed to be caused by the high valence-band-discontinuity (ΔEυ) to conduction-band-discontinuity (ΔEc) ratio at InGaP/GaAs heterointerfare which gives holes and electrons accumulation effect successively. Under normal operation mode, a typical common-emitter current gain of 60 is obtained at collector current density of 400 A/cm2 for the studied HEBT without emitter-edge thinning structure. Consequently, the controlled switching and transistor performances provide a promise of the studied device for circuit applications.

Original languageEnglish
Pages (from-to)130-132
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number3
DOIs
Publication statusPublished - 1996 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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