Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications

Wen Chau Liu; Wei Chou Wang; Hsi Jen Pan; Jing Yuh Chen; Shiou Ying Cheng; Kun Wei Lin; Kuo Hui Yu; Kong Beng Thei; Chin Chuan Cheng

doi:10.1109/16.853030

Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications

Wen Chau Liu, Wei Chou Wang, Hsi Jen Pan, Jing Yuh Chen, Shiou Ying Cheng, Kun Wei Lin, Kuo Hui Yu, Kong Beng Thei, Chin Chuan Cheng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A novel multiple-state switching device based on an InP/AlInGaAs heterojunction bipolar transistor (HBT) structure has been successfully fabricated and demonstrated. The common-emitter current gain up to 25 is obtained under the forward operation mode. However, the anomalous multiple-negative-differential-resistance (MNDR) phenomena controlled either by electrical or optical input signals are observed under the inverted operation mode. The studied device exhibits a single-route S-shaped NDR behavior in the dark and a distinct significant S-shaped MNDR phenomena by introducing an incident light source at room temperature. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics are also observed at 77 K. The switching behaviors are attributed to the avalanche multiplication, barrier lowering effect and potential redistribution process. Experimental results show that the studied device provides a good potentiality for multiple-valued logic and optoelectronic switching system applications.

Original language	English
Pages (from-to)	1553-1559
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	47
Issue number	8
DOIs	https://doi.org/10.1109/16.853030
Publication status	Published - 2000 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{f32c5bf124e24ad2829dfb92f4382d67,

title = "Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications",

abstract = "A novel multiple-state switching device based on an InP/AlInGaAs heterojunction bipolar transistor (HBT) structure has been successfully fabricated and demonstrated. The common-emitter current gain up to 25 is obtained under the forward operation mode. However, the anomalous multiple-negative-differential-resistance (MNDR) phenomena controlled either by electrical or optical input signals are observed under the inverted operation mode. The studied device exhibits a single-route S-shaped NDR behavior in the dark and a distinct significant S-shaped MNDR phenomena by introducing an incident light source at room temperature. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics are also observed at 77 K. The switching behaviors are attributed to the avalanche multiplication, barrier lowering effect and potential redistribution process. Experimental results show that the studied device provides a good potentiality for multiple-valued logic and optoelectronic switching system applications.",

author = "Liu, {Wen Chau} and Wang, {Wei Chou} and Pan, {Hsi Jen} and Chen, {Jing Yuh} and Cheng, {Shiou Ying} and Lin, {Kun Wei} and Yu, {Kuo Hui} and Thei, {Kong Beng} and Cheng, {Chin Chuan}",

note = "Funding Information: Manuscript received January 10, 2000. This work was supported in part by the National Science Council of the Republic of China under Contract NSC 89-2215-E-006-012. The review of this paper was arranged by Editor C.-Y. Lu.",

year = "2000",

month = aug,

doi = "10.1109/16.853030",

language = "English",

volume = "47",

pages = "1553--1559",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications

AU - Liu, Wen Chau

AU - Wang, Wei Chou

AU - Pan, Hsi Jen

AU - Chen, Jing Yuh

AU - Cheng, Shiou Ying

AU - Lin, Kun Wei

AU - Yu, Kuo Hui

AU - Thei, Kong Beng

AU - Cheng, Chin Chuan

N1 - Funding Information: Manuscript received January 10, 2000. This work was supported in part by the National Science Council of the Republic of China under Contract NSC 89-2215-E-006-012. The review of this paper was arranged by Editor C.-Y. Lu.

PY - 2000/8

Y1 - 2000/8

N2 - A novel multiple-state switching device based on an InP/AlInGaAs heterojunction bipolar transistor (HBT) structure has been successfully fabricated and demonstrated. The common-emitter current gain up to 25 is obtained under the forward operation mode. However, the anomalous multiple-negative-differential-resistance (MNDR) phenomena controlled either by electrical or optical input signals are observed under the inverted operation mode. The studied device exhibits a single-route S-shaped NDR behavior in the dark and a distinct significant S-shaped MNDR phenomena by introducing an incident light source at room temperature. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics are also observed at 77 K. The switching behaviors are attributed to the avalanche multiplication, barrier lowering effect and potential redistribution process. Experimental results show that the studied device provides a good potentiality for multiple-valued logic and optoelectronic switching system applications.

AB - A novel multiple-state switching device based on an InP/AlInGaAs heterojunction bipolar transistor (HBT) structure has been successfully fabricated and demonstrated. The common-emitter current gain up to 25 is obtained under the forward operation mode. However, the anomalous multiple-negative-differential-resistance (MNDR) phenomena controlled either by electrical or optical input signals are observed under the inverted operation mode. The studied device exhibits a single-route S-shaped NDR behavior in the dark and a distinct significant S-shaped MNDR phenomena by introducing an incident light source at room temperature. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics are also observed at 77 K. The switching behaviors are attributed to the avalanche multiplication, barrier lowering effect and potential redistribution process. Experimental results show that the studied device provides a good potentiality for multiple-valued logic and optoelectronic switching system applications.

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JF - IEEE Transactions on Electron Devices

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Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications

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