TY - JOUR
T1 - Multiple-Submicron Channel Array Gate-Recessed AlGaN/GaN Fin-MOSHEMTs
AU - Lee, Ching Ting
AU - Juo, Hung Yin
N1 - Funding Information:
1 Department of Photonics Engineering, Yuan Ze University, Taoyuan 320, Taiwan 2 Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan CORRESPONDING AUTHOR: C.-T. LEE (e-mail: [email protected]) This work was supported by the Ministry of Science and Technology of the Republic of China under Contract MOST 105-2221-E-006-199-MY3.
Publisher Copyright:
© 2013 IEEE.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018
Y1 - 2018
N2 - In this paper, the multiple-submicron channel array gate-recessed AlGaN/GaN fin-metal-oxide-semiconductor high-electron mobility transistors (fin-MOSHEMTs) were fabricated using the photoelectrochemical oxidation method, the photoelectrochemical etching method, and the He-Cd laser interference photolithography method. The multiple-submicron channel array was formed using the He-Cd laser interference photolithography system. The gate-recessed structure and the directly grown gate oxide layer were performed using the photoelectrochemical etching method and the photoelectrochemical oxidation method, respectively. The subthreshold swing and the extrinsic transconductance were improved in the resulting devices with a narrower channel width. Furthermore, the unit gain cutoff frequency and the maximum oscillation frequency were also enhanced using a narrower channel width in the multiple-submicron channel array AlGaN/GaN fin-MOSHEMTs.
AB - In this paper, the multiple-submicron channel array gate-recessed AlGaN/GaN fin-metal-oxide-semiconductor high-electron mobility transistors (fin-MOSHEMTs) were fabricated using the photoelectrochemical oxidation method, the photoelectrochemical etching method, and the He-Cd laser interference photolithography method. The multiple-submicron channel array was formed using the He-Cd laser interference photolithography system. The gate-recessed structure and the directly grown gate oxide layer were performed using the photoelectrochemical etching method and the photoelectrochemical oxidation method, respectively. The subthreshold swing and the extrinsic transconductance were improved in the resulting devices with a narrower channel width. Furthermore, the unit gain cutoff frequency and the maximum oscillation frequency were also enhanced using a narrower channel width in the multiple-submicron channel array AlGaN/GaN fin-MOSHEMTs.
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U2 - 10.1109/JEDS.2017.2786866
DO - 10.1109/JEDS.2017.2786866
M3 - Article
AN - SCOPUS:85039802368
SN - 2168-6734
VL - 6
SP - 183
EP - 188
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
IS - 1
M1 - 8239583
ER -