Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure transistors

Chin Chuan Cheng; Jung Hui Tsai; Wen Chau Liu

doi:10.1143/jjap.36.980

Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure transistors

Chin Chuan Cheng, Jung Hui Tsai, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

An interesting multiple negative-differential-resistance (NDR) phenomenon is observed in AlGaAs/InGaAs/ GaAs heterostructure bipolar transistors with abrupt or graded AlGaAs confinement layers under the inverted operation mode. The switching behaviors are mainly due to avalanche multiplication and a two-stage barrier lowering effect. The switching properties of the first S-shaped NDR observed in the device with the abrupt confinement layer are better than those observed in the device with the graded confinement layer, due to the former device's superior confinement effect on holes and electrons. The control voltage efficiency of the second S-shaped NDR is nearly equal in the studied devices because the InGaAs quantum well dominates the properties of this NDR.

Original language	English
Pages (from-to)	980-983
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	36
Issue number	3 SUPPL. A
DOIs	https://doi.org/10.1143/jjap.36.980
Publication status	Published - 1997 Mar

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.36.980

Cite this

@article{5dd6957757194d6fa223459cb4b9bc04,

title = "Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure transistors",

abstract = "An interesting multiple negative-differential-resistance (NDR) phenomenon is observed in AlGaAs/InGaAs/ GaAs heterostructure bipolar transistors with abrupt or graded AlGaAs confinement layers under the inverted operation mode. The switching behaviors are mainly due to avalanche multiplication and a two-stage barrier lowering effect. The switching properties of the first S-shaped NDR observed in the device with the abrupt confinement layer are better than those observed in the device with the graded confinement layer, due to the former device's superior confinement effect on holes and electrons. The control voltage efficiency of the second S-shaped NDR is nearly equal in the studied devices because the InGaAs quantum well dominates the properties of this NDR.",

author = "Cheng, {Chin Chuan} and Tsai, {Jung Hui} and Liu, {Wen Chau}",

year = "1997",

month = mar,

doi = "10.1143/jjap.36.980",

language = "English",

volume = "36",

pages = "980--983",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "3 SUPPL. A",

}

TY - JOUR

T1 - Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure transistors

AU - Cheng, Chin Chuan

AU - Tsai, Jung Hui

AU - Liu, Wen Chau

PY - 1997/3

Y1 - 1997/3

N2 - An interesting multiple negative-differential-resistance (NDR) phenomenon is observed in AlGaAs/InGaAs/ GaAs heterostructure bipolar transistors with abrupt or graded AlGaAs confinement layers under the inverted operation mode. The switching behaviors are mainly due to avalanche multiplication and a two-stage barrier lowering effect. The switching properties of the first S-shaped NDR observed in the device with the abrupt confinement layer are better than those observed in the device with the graded confinement layer, due to the former device's superior confinement effect on holes and electrons. The control voltage efficiency of the second S-shaped NDR is nearly equal in the studied devices because the InGaAs quantum well dominates the properties of this NDR.

AB - An interesting multiple negative-differential-resistance (NDR) phenomenon is observed in AlGaAs/InGaAs/ GaAs heterostructure bipolar transistors with abrupt or graded AlGaAs confinement layers under the inverted operation mode. The switching behaviors are mainly due to avalanche multiplication and a two-stage barrier lowering effect. The switching properties of the first S-shaped NDR observed in the device with the abrupt confinement layer are better than those observed in the device with the graded confinement layer, due to the former device's superior confinement effect on holes and electrons. The control voltage efficiency of the second S-shaped NDR is nearly equal in the studied devices because the InGaAs quantum well dominates the properties of this NDR.

UR - http://www.scopus.com/inward/record.url?scp=0031098348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031098348&partnerID=8YFLogxK

U2 - 10.1143/jjap.36.980

DO - 10.1143/jjap.36.980

M3 - Article

AN - SCOPUS:0031098348

SN - 0021-4922

VL - 36

SP - 980

EP - 983

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3 SUPPL. A

ER -

Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this