Multistep Si(100) Terraced Structure by One Photo Mask for Microlens

Chen-Kuei Chung, Y. T. Li, C. C. Lee, C. Y. Wu, T. S. Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The preparation method of multistep Si(100) terraced structure by one photo mask has been proposed. Firstly, silicon nitride or oxide is deposited on the Si(100) substrate as the etching mask of Si(100) in KOH solution. Then, the pattern of the photo mask is transferred to the etching mask by the standard lithography and etching process. The pattern design is very important for the formation of multistep Si(100) terraced structure. In the application of n-step diffractive lens with the same step height, the widths [bn] and intervals [an] of the masked areas of the photo-mask pattern are decided under an arithmetic relation. Finally, the multistep Si(100) structure is formed during the KOH anisotropic etching process. Eight-level Si(100) terraced structure has been achieved. It will simplify the conventional process, in which m masks are necessary for 2m-step microlens, and reduces the cost.

Original languageEnglish
Pages (from-to)131-137
Number of pages7
JournalIEEJ Transactions on Sensors and Micromachines
Volume119
Issue number3
DOIs
Publication statusPublished - 1999 Jan 1

Fingerprint

Masks
Etching
Anisotropic etching
Silicon oxides
Silicon nitride
Lithography
Lenses
Substrates
Costs

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Chung, Chen-Kuei ; Li, Y. T. ; Lee, C. C. ; Wu, C. Y. ; Lee, T. S. / Multistep Si(100) Terraced Structure by One Photo Mask for Microlens. In: IEEJ Transactions on Sensors and Micromachines. 1999 ; Vol. 119, No. 3. pp. 131-137.
@article{2c34546c38fa4c1cbaaff89839ea5346,
title = "Multistep Si(100) Terraced Structure by One Photo Mask for Microlens",
abstract = "The preparation method of multistep Si(100) terraced structure by one photo mask has been proposed. Firstly, silicon nitride or oxide is deposited on the Si(100) substrate as the etching mask of Si(100) in KOH solution. Then, the pattern of the photo mask is transferred to the etching mask by the standard lithography and etching process. The pattern design is very important for the formation of multistep Si(100) terraced structure. In the application of n-step diffractive lens with the same step height, the widths [bn] and intervals [an] of the masked areas of the photo-mask pattern are decided under an arithmetic relation. Finally, the multistep Si(100) structure is formed during the KOH anisotropic etching process. Eight-level Si(100) terraced structure has been achieved. It will simplify the conventional process, in which m masks are necessary for 2m-step microlens, and reduces the cost.",
author = "Chen-Kuei Chung and Li, {Y. T.} and Lee, {C. C.} and Wu, {C. Y.} and Lee, {T. S.}",
year = "1999",
month = "1",
day = "1",
doi = "10.1541/ieejsmas.119.131",
language = "English",
volume = "119",
pages = "131--137",
journal = "IEEJ Transactions on Sensors and Micromachines",
issn = "1341-8939",
publisher = "The Institute of Electrical Engineers of Japan",
number = "3",

}

Multistep Si(100) Terraced Structure by One Photo Mask for Microlens. / Chung, Chen-Kuei; Li, Y. T.; Lee, C. C.; Wu, C. Y.; Lee, T. S.

In: IEEJ Transactions on Sensors and Micromachines, Vol. 119, No. 3, 01.01.1999, p. 131-137.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Multistep Si(100) Terraced Structure by One Photo Mask for Microlens

AU - Chung, Chen-Kuei

AU - Li, Y. T.

AU - Lee, C. C.

AU - Wu, C. Y.

AU - Lee, T. S.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The preparation method of multistep Si(100) terraced structure by one photo mask has been proposed. Firstly, silicon nitride or oxide is deposited on the Si(100) substrate as the etching mask of Si(100) in KOH solution. Then, the pattern of the photo mask is transferred to the etching mask by the standard lithography and etching process. The pattern design is very important for the formation of multistep Si(100) terraced structure. In the application of n-step diffractive lens with the same step height, the widths [bn] and intervals [an] of the masked areas of the photo-mask pattern are decided under an arithmetic relation. Finally, the multistep Si(100) structure is formed during the KOH anisotropic etching process. Eight-level Si(100) terraced structure has been achieved. It will simplify the conventional process, in which m masks are necessary for 2m-step microlens, and reduces the cost.

AB - The preparation method of multistep Si(100) terraced structure by one photo mask has been proposed. Firstly, silicon nitride or oxide is deposited on the Si(100) substrate as the etching mask of Si(100) in KOH solution. Then, the pattern of the photo mask is transferred to the etching mask by the standard lithography and etching process. The pattern design is very important for the formation of multistep Si(100) terraced structure. In the application of n-step diffractive lens with the same step height, the widths [bn] and intervals [an] of the masked areas of the photo-mask pattern are decided under an arithmetic relation. Finally, the multistep Si(100) structure is formed during the KOH anisotropic etching process. Eight-level Si(100) terraced structure has been achieved. It will simplify the conventional process, in which m masks are necessary for 2m-step microlens, and reduces the cost.

UR - http://www.scopus.com/inward/record.url?scp=85010126716&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85010126716&partnerID=8YFLogxK

U2 - 10.1541/ieejsmas.119.131

DO - 10.1541/ieejsmas.119.131

M3 - Article

VL - 119

SP - 131

EP - 137

JO - IEEJ Transactions on Sensors and Micromachines

JF - IEEJ Transactions on Sensors and Micromachines

SN - 1341-8939

IS - 3

ER -