N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes

Yu Wu Wang; Chen Hsiang Yen; Wei Yang Chou; Shyh Jiun Liu; Horng Long Cheng

doi:10.1117/12.793662

N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes

Yu Wu Wang, Chen Hsiang Yen, Wei Yang Chou, Shyh Jiun Liu, Horng Long Cheng

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this study, device characterization and carrier transport properties of n-type fluorinated copper phthalocyanine (F₁₆CuPc) organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with oxygen plasma-treatment indium-tin-oxide (ITO) bottom source and drain (S/D) contact. We fabricated F₁₆CuPc-based OTFTs having comb-shaped channels with a series of channel lengths of 5~100 μm at a fixed channel width. The electrical characteristics of OTFTs were measured by a Keithley 4200-SCS semiconductor parameter analyzer in a dark glove box in a nitrogen atmosphere to avoid the influence of measuring environments. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the linear and saturation field-effect mobilities and threshold voltages of F ₁₆CuPc-based OTFTs increased with increasing channel length. The linear and saturated field-effect mobilities were gate-bias dependent in all devices with different channel dimensions. Moreover, the contact resistance between ITO S/D electrodes and F₁₆CuPc and channel resistance of F₁₆CuPc were investigated using the gated-transfer length method. The results of our experiments suggest that the contact resistance between ITO electrodes and F₁₆CuPc plays an important role in current-voltage characteristics. Additionally, abnormal increases in saturated field-effect mobility at channel lengths below 10 μm were observed in our experimental devices and were attributed to short channel effects. Such non-ideal effects of the present F₁₆CuPc-based OTFT devices were investigated in detail. In summary, we found that the oxygen-plasma-treatment ITO bottom contact S/D electrode-based F₁₆CuPc OTFT devices were very durable and suitable to make large area transistor arrays with complicated integrated circuits by photolithography techniques.

Original language	English
Title of host publication	Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics
DOIs	https://doi.org/10.1117/12.793662
Publication status	Published - 2008
Event	Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics - San Diego, CA, United States Duration: 2008 Aug 10 → 2008 Aug 12

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7054
ISSN (Print)	0277-786X

Other

Other	Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics
Country/Territory	United States
City	San Diego, CA
Period	08-08-10 → 08-08-12

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.793662

Cite this

Wang, Y. W., Yen, C. H., Chou, W. Y., Liu, S. J., & Cheng, H. L. (2008). N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes. In Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics Article 705416 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7054). https://doi.org/10.1117/12.793662

@inproceedings{dddb505cda694aa2bbee5dc27effaa5f,

title = "N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes",

abstract = "In this study, device characterization and carrier transport properties of n-type fluorinated copper phthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with oxygen plasma-treatment indium-tin-oxide (ITO) bottom source and drain (S/D) contact. We fabricated F16CuPc-based OTFTs having comb-shaped channels with a series of channel lengths of 5~100 μm at a fixed channel width. The electrical characteristics of OTFTs were measured by a Keithley 4200-SCS semiconductor parameter analyzer in a dark glove box in a nitrogen atmosphere to avoid the influence of measuring environments. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the linear and saturation field-effect mobilities and threshold voltages of F 16CuPc-based OTFTs increased with increasing channel length. The linear and saturated field-effect mobilities were gate-bias dependent in all devices with different channel dimensions. Moreover, the contact resistance between ITO S/D electrodes and F16CuPc and channel resistance of F16CuPc were investigated using the gated-transfer length method. The results of our experiments suggest that the contact resistance between ITO electrodes and F16CuPc plays an important role in current-voltage characteristics. Additionally, abnormal increases in saturated field-effect mobility at channel lengths below 10 μm were observed in our experimental devices and were attributed to short channel effects. Such non-ideal effects of the present F16CuPc-based OTFT devices were investigated in detail. In summary, we found that the oxygen-plasma-treatment ITO bottom contact S/D electrode-based F16CuPc OTFT devices were very durable and suitable to make large area transistor arrays with complicated integrated circuits by photolithography techniques.",

author = "Wang, {Yu Wu} and Yen, {Chen Hsiang} and Chou, {Wei Yang} and Liu, {Shyh Jiun} and Cheng, {Horng Long}",

year = "2008",

doi = "10.1117/12.793662",

language = "English",

isbn = "9780819472748",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics",

note = "Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics ; Conference date: 10-08-2008 Through 12-08-2008",

}

Wang, YW, Yen, CH, Chou, WY, Liu, SJ & Cheng, HL 2008, N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes. in Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics., 705416, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7054, Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics, San Diego, CA, United States, 08-08-10. https://doi.org/10.1117/12.793662

N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes. / Wang, Yu Wu; Yen, Chen Hsiang; Chou, Wei Yang et al.
Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics. 2008. 705416 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7054).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes

AU - Wang, Yu Wu

AU - Yen, Chen Hsiang

AU - Chou, Wei Yang

AU - Liu, Shyh Jiun

AU - Cheng, Horng Long

PY - 2008

Y1 - 2008

N2 - In this study, device characterization and carrier transport properties of n-type fluorinated copper phthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with oxygen plasma-treatment indium-tin-oxide (ITO) bottom source and drain (S/D) contact. We fabricated F16CuPc-based OTFTs having comb-shaped channels with a series of channel lengths of 5~100 μm at a fixed channel width. The electrical characteristics of OTFTs were measured by a Keithley 4200-SCS semiconductor parameter analyzer in a dark glove box in a nitrogen atmosphere to avoid the influence of measuring environments. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the linear and saturation field-effect mobilities and threshold voltages of F 16CuPc-based OTFTs increased with increasing channel length. The linear and saturated field-effect mobilities were gate-bias dependent in all devices with different channel dimensions. Moreover, the contact resistance between ITO S/D electrodes and F16CuPc and channel resistance of F16CuPc were investigated using the gated-transfer length method. The results of our experiments suggest that the contact resistance between ITO electrodes and F16CuPc plays an important role in current-voltage characteristics. Additionally, abnormal increases in saturated field-effect mobility at channel lengths below 10 μm were observed in our experimental devices and were attributed to short channel effects. Such non-ideal effects of the present F16CuPc-based OTFT devices were investigated in detail. In summary, we found that the oxygen-plasma-treatment ITO bottom contact S/D electrode-based F16CuPc OTFT devices were very durable and suitable to make large area transistor arrays with complicated integrated circuits by photolithography techniques.

AB - In this study, device characterization and carrier transport properties of n-type fluorinated copper phthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with oxygen plasma-treatment indium-tin-oxide (ITO) bottom source and drain (S/D) contact. We fabricated F16CuPc-based OTFTs having comb-shaped channels with a series of channel lengths of 5~100 μm at a fixed channel width. The electrical characteristics of OTFTs were measured by a Keithley 4200-SCS semiconductor parameter analyzer in a dark glove box in a nitrogen atmosphere to avoid the influence of measuring environments. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the linear and saturation field-effect mobilities and threshold voltages of F 16CuPc-based OTFTs increased with increasing channel length. The linear and saturated field-effect mobilities were gate-bias dependent in all devices with different channel dimensions. Moreover, the contact resistance between ITO S/D electrodes and F16CuPc and channel resistance of F16CuPc were investigated using the gated-transfer length method. The results of our experiments suggest that the contact resistance between ITO electrodes and F16CuPc plays an important role in current-voltage characteristics. Additionally, abnormal increases in saturated field-effect mobility at channel lengths below 10 μm were observed in our experimental devices and were attributed to short channel effects. Such non-ideal effects of the present F16CuPc-based OTFT devices were investigated in detail. In summary, we found that the oxygen-plasma-treatment ITO bottom contact S/D electrode-based F16CuPc OTFT devices were very durable and suitable to make large area transistor arrays with complicated integrated circuits by photolithography techniques.

UR - http://www.scopus.com/inward/record.url?scp=55549109059&partnerID=8YFLogxK

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U2 - 10.1117/12.793662

DO - 10.1117/12.793662

M3 - Conference contribution

AN - SCOPUS:55549109059

SN - 9780819472748

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics

T2 - Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics

Y2 - 10 August 2008 through 12 August 2008

ER -

Wang YW, Yen CH, Chou WY, Liu SJ, Cheng HL. N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes. In Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics. 2008. 705416. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.793662

N-channel fluorinated copper phthalocyanine thin-film transistors utilizing oxygen-plasma-treatment ITO source and drain electrodes

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