N+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors

Yu Shyan Lin, Dong Hai Huang, Wei-Chou Hsu, Tzong Bin Wang, Rong Tay Hsu, Yu Huei Wu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This investigation proposes InAlGaP/InGaAs camel-gate high-electron mobility transistors with inverted δ-doping layers (CAM-HEMTs). CAM-HEMTs with various gate metals, including Au, Pt/Au, Ti/Au, and Ni/Au, are investigated. The CAM-HEMT with the Ni/Au gate metal exhibits the benefits of a large gate voltage swing (3.6 V), a high two-terminal gate-source breakdown voltage (>20 V), no bell-shaped gate current and temperature-insensitive threshold voltages. These characteristics are attributable to the inverted δ-doping layer, the large conduction-band discontinuity of the InAlGaP/InGaAs heterojunction, the large bandgap of InAlGaP and the high camel-gate barrier with the Ni/Au gate metal.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume9
Issue number2
DOIs
Publication statusPublished - 2006 Apr 10

Fingerprint

High electron mobility transistors
high electron mobility transistors
Computer aided manufacturing
Metals
computer aided manufacturing
Doping (additives)
Gates (transistor)
Conduction bands
Electric breakdown
Threshold voltage
Heterojunctions
Energy gap
metals
gallium arsenide
Electric potential
electrical faults
bells
threshold voltage
heterojunctions
discontinuity

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Materials Science(all)

Cite this

Lin, Yu Shyan ; Huang, Dong Hai ; Hsu, Wei-Chou ; Wang, Tzong Bin ; Hsu, Rong Tay ; Wu, Yu Huei. / N+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors. In: Electrochemical and Solid-State Letters. 2006 ; Vol. 9, No. 2.
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abstract = "This investigation proposes InAlGaP/InGaAs camel-gate high-electron mobility transistors with inverted δ-doping layers (CAM-HEMTs). CAM-HEMTs with various gate metals, including Au, Pt/Au, Ti/Au, and Ni/Au, are investigated. The CAM-HEMT with the Ni/Au gate metal exhibits the benefits of a large gate voltage swing (3.6 V), a high two-terminal gate-source breakdown voltage (>20 V), no bell-shaped gate current and temperature-insensitive threshold voltages. These characteristics are attributable to the inverted δ-doping layer, the large conduction-band discontinuity of the InAlGaP/InGaAs heterojunction, the large bandgap of InAlGaP and the high camel-gate barrier with the Ni/Au gate metal.",
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N+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors. / Lin, Yu Shyan; Huang, Dong Hai; Hsu, Wei-Chou; Wang, Tzong Bin; Hsu, Rong Tay; Wu, Yu Huei.

In: Electrochemical and Solid-State Letters, Vol. 9, No. 2, 10.04.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - N+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors

AU - Lin, Yu Shyan

AU - Huang, Dong Hai

AU - Hsu, Wei-Chou

AU - Wang, Tzong Bin

AU - Hsu, Rong Tay

AU - Wu, Yu Huei

PY - 2006/4/10

Y1 - 2006/4/10

N2 - This investigation proposes InAlGaP/InGaAs camel-gate high-electron mobility transistors with inverted δ-doping layers (CAM-HEMTs). CAM-HEMTs with various gate metals, including Au, Pt/Au, Ti/Au, and Ni/Au, are investigated. The CAM-HEMT with the Ni/Au gate metal exhibits the benefits of a large gate voltage swing (3.6 V), a high two-terminal gate-source breakdown voltage (>20 V), no bell-shaped gate current and temperature-insensitive threshold voltages. These characteristics are attributable to the inverted δ-doping layer, the large conduction-band discontinuity of the InAlGaP/InGaAs heterojunction, the large bandgap of InAlGaP and the high camel-gate barrier with the Ni/Au gate metal.

AB - This investigation proposes InAlGaP/InGaAs camel-gate high-electron mobility transistors with inverted δ-doping layers (CAM-HEMTs). CAM-HEMTs with various gate metals, including Au, Pt/Au, Ti/Au, and Ni/Au, are investigated. The CAM-HEMT with the Ni/Au gate metal exhibits the benefits of a large gate voltage swing (3.6 V), a high two-terminal gate-source breakdown voltage (>20 V), no bell-shaped gate current and temperature-insensitive threshold voltages. These characteristics are attributable to the inverted δ-doping layer, the large conduction-band discontinuity of the InAlGaP/InGaAs heterojunction, the large bandgap of InAlGaP and the high camel-gate barrier with the Ni/Au gate metal.

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U2 - 10.1149/1.2146717

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JO - Electrochemical and Solid-State Letters

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SN - 1099-0062

IS - 2

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