(N H4)2 Sx-treated AlGaN/GaN MOS-HEMTs with ZnO gate dielectric layer

Ya Lan Chiou, Ching Ting Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The function of the (N H4)2 Sx surface treatment on the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) was investigated by using the pulsed output characteristics and the low frequency noise measurements. The low carrier concentration and high resistivity 30-nm-thick ZnO film was deposited using the designed vapor cooling condensation system and utilized as the gate dielectric layer of the AlGaN/GaN MOS-HEMTs. The significant improvement of the pulsed output performance and low frequency noise behavior of the (N H4)2 Sx-treated AlGaN/GaN MOS-HEMTs showed that the (N H4)2 Sx surface treatment was an effective technique to reduce the surface state density and to obtain high quality interface between the ZnO gate dielectric layer and the AlGaN layer. The decrease of the surface states is attributed to the reduction of Ga dangling bonds and passivation of N vacancies by the formation of Ga-S bond on the AlGaN surface.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number2
DOIs
Publication statusPublished - 2011 Jan 5

Fingerprint

Gate dielectrics
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
Metals
Surface states
surface treatment
Surface treatment
low frequencies
Dangling bonds
output
noise measurement
Thick films
Passivation
passivity
Vacancies
thick films
Carrier concentration
Condensation
condensation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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abstract = "The function of the (N H4)2 Sx surface treatment on the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) was investigated by using the pulsed output characteristics and the low frequency noise measurements. The low carrier concentration and high resistivity 30-nm-thick ZnO film was deposited using the designed vapor cooling condensation system and utilized as the gate dielectric layer of the AlGaN/GaN MOS-HEMTs. The significant improvement of the pulsed output performance and low frequency noise behavior of the (N H4)2 Sx-treated AlGaN/GaN MOS-HEMTs showed that the (N H4)2 Sx surface treatment was an effective technique to reduce the surface state density and to obtain high quality interface between the ZnO gate dielectric layer and the AlGaN layer. The decrease of the surface states is attributed to the reduction of Ga dangling bonds and passivation of N vacancies by the formation of Ga-S bond on the AlGaN surface.",
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(N H4)2 Sx-treated AlGaN/GaN MOS-HEMTs with ZnO gate dielectric layer. / Chiou, Ya Lan; Lee, Ching Ting.

In: Journal of the Electrochemical Society, Vol. 158, No. 2, 05.01.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - (N H4)2 Sx-treated AlGaN/GaN MOS-HEMTs with ZnO gate dielectric layer

AU - Chiou, Ya Lan

AU - Lee, Ching Ting

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N2 - The function of the (N H4)2 Sx surface treatment on the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) was investigated by using the pulsed output characteristics and the low frequency noise measurements. The low carrier concentration and high resistivity 30-nm-thick ZnO film was deposited using the designed vapor cooling condensation system and utilized as the gate dielectric layer of the AlGaN/GaN MOS-HEMTs. The significant improvement of the pulsed output performance and low frequency noise behavior of the (N H4)2 Sx-treated AlGaN/GaN MOS-HEMTs showed that the (N H4)2 Sx surface treatment was an effective technique to reduce the surface state density and to obtain high quality interface between the ZnO gate dielectric layer and the AlGaN layer. The decrease of the surface states is attributed to the reduction of Ga dangling bonds and passivation of N vacancies by the formation of Ga-S bond on the AlGaN surface.

AB - The function of the (N H4)2 Sx surface treatment on the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) was investigated by using the pulsed output characteristics and the low frequency noise measurements. The low carrier concentration and high resistivity 30-nm-thick ZnO film was deposited using the designed vapor cooling condensation system and utilized as the gate dielectric layer of the AlGaN/GaN MOS-HEMTs. The significant improvement of the pulsed output performance and low frequency noise behavior of the (N H4)2 Sx-treated AlGaN/GaN MOS-HEMTs showed that the (N H4)2 Sx surface treatment was an effective technique to reduce the surface state density and to obtain high quality interface between the ZnO gate dielectric layer and the AlGaN layer. The decrease of the surface states is attributed to the reduction of Ga dangling bonds and passivation of N vacancies by the formation of Ga-S bond on the AlGaN surface.

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