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(N H
4
)2 S
x
-treated AlGaN/GaN MOS-HEMTs with ZnO gate dielectric layer
Ya Lan Chiou
,
Ching Ting Lee
Department of Photonics
Research output
:
Contribution to journal
›
Article
›
peer-review
4
Citations (Scopus)
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4
)2 S
x
-treated AlGaN/GaN MOS-HEMTs with ZnO gate dielectric layer'. Together they form a unique fingerprint.
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Material Science
Dielectric Material
100%
Metal Oxide
100%
ZnO
100%
Electron Mobility
100%
Transistor
100%
Oxide Semiconductor
100%
Surface (Surface Science)
75%
Surface Treatment
50%
Film
25%
Density
25%
Electrical Resistivity
25%
Carrier Concentration
25%
Engineering
Metal Oxide Semiconductor
100%
Gate Dielectric
100%
Dielectric Layer
100%
Frequency Noise
50%
Surface State
50%
Carrier Concentration
25%
Passivation
25%
Dangling Bond
25%
Condensation System
25%
Performance Output
25%
Keyphrases
Low Frequency Noise Measurements
25%
Low Carrier Concentration
25%
High-quality Interface
25%