N 2-plasma nitridation on Si(111): Its effect on crystalline silicon nitride growth

Chung Lin Wu; Wei Sheng Chen; Ying Hung Su

doi:10.1016/j.susc.2012.03.004

N ₂-plasma nitridation on Si(111): Its effect on crystalline silicon nitride growth

Chung Lin Wu
, Wei Sheng Chen
, Ying Hung Su

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

This study uses a combination of atom-resolved scanning tunneling microscopic and spectroscopic (STM/STS) techniques to investigate the effects of N ₂-plasma nitridation on a crystalline β-Si ₃N ₄ ultrathin film grown on the Si(111) substrate. The proposed two-step growth process, including N ₂-plasma nitridation followed by vacuum annealing both at high temperature (∼ 900 °C), can substantially improve the atomic and electronic structures of the β-Si ₃N ₄ having an atomically uniform morphology and stoichiometry. The effects of nitridation and post-annealing temperatures were examined by monitoring the morphological and electronic-structural evolutions of a non-stoichiometric surface. Moreover, the two-step N ₂-plasma nitridation process has extremely low activation energy and thus minimizes the thermal energy from the substrate for practical growth of β-Si ₃N ₄ ultrathin film.

Original language	English
Pages (from-to)	L51-L54
Journal	Surface Science
Volume	606
Issue number	15-16
DOIs	https://doi.org/10.1016/j.susc.2012.03.004
Publication status	Published - 2012 Aug

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.susc.2012.03.004

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@article{884198473ca34609847fa6caee948728,

title = "N 2-plasma nitridation on Si(111): Its effect on crystalline silicon nitride growth",

abstract = "This study uses a combination of atom-resolved scanning tunneling microscopic and spectroscopic (STM/STS) techniques to investigate the effects of N 2-plasma nitridation on a crystalline β-Si 3N 4 ultrathin film grown on the Si(111) substrate. The proposed two-step growth process, including N 2-plasma nitridation followed by vacuum annealing both at high temperature (∼ 900 °C), can substantially improve the atomic and electronic structures of the β-Si 3N 4 having an atomically uniform morphology and stoichiometry. The effects of nitridation and post-annealing temperatures were examined by monitoring the morphological and electronic-structural evolutions of a non-stoichiometric surface. Moreover, the two-step N 2-plasma nitridation process has extremely low activation energy and thus minimizes the thermal energy from the substrate for practical growth of β-Si 3N 4 ultrathin film.",

author = "Wu, \{Chung Lin\} and Chen, \{Wei Sheng\} and Su, \{Ying Hung\}",

note = "Funding Information: This work was supported by the National Science Council in Taiwan .",

year = "2012",

month = aug,

doi = "10.1016/j.susc.2012.03.004",

language = "English",

volume = "606",

pages = "L51--L54",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier BV",

number = "15-16",

}

TY - JOUR

T1 - N 2-plasma nitridation on Si(111)

T2 - Its effect on crystalline silicon nitride growth

AU - Wu, Chung Lin

AU - Chen, Wei Sheng

AU - Su, Ying Hung

N1 - Funding Information: This work was supported by the National Science Council in Taiwan .

PY - 2012/8

Y1 - 2012/8

N2 - This study uses a combination of atom-resolved scanning tunneling microscopic and spectroscopic (STM/STS) techniques to investigate the effects of N 2-plasma nitridation on a crystalline β-Si 3N 4 ultrathin film grown on the Si(111) substrate. The proposed two-step growth process, including N 2-plasma nitridation followed by vacuum annealing both at high temperature (∼ 900 °C), can substantially improve the atomic and electronic structures of the β-Si 3N 4 having an atomically uniform morphology and stoichiometry. The effects of nitridation and post-annealing temperatures were examined by monitoring the morphological and electronic-structural evolutions of a non-stoichiometric surface. Moreover, the two-step N 2-plasma nitridation process has extremely low activation energy and thus minimizes the thermal energy from the substrate for practical growth of β-Si 3N 4 ultrathin film.

AB - This study uses a combination of atom-resolved scanning tunneling microscopic and spectroscopic (STM/STS) techniques to investigate the effects of N 2-plasma nitridation on a crystalline β-Si 3N 4 ultrathin film grown on the Si(111) substrate. The proposed two-step growth process, including N 2-plasma nitridation followed by vacuum annealing both at high temperature (∼ 900 °C), can substantially improve the atomic and electronic structures of the β-Si 3N 4 having an atomically uniform morphology and stoichiometry. The effects of nitridation and post-annealing temperatures were examined by monitoring the morphological and electronic-structural evolutions of a non-stoichiometric surface. Moreover, the two-step N 2-plasma nitridation process has extremely low activation energy and thus minimizes the thermal energy from the substrate for practical growth of β-Si 3N 4 ultrathin film.

UR - https://www.scopus.com/pages/publications/84861874288

UR - https://www.scopus.com/pages/publications/84861874288#tab=citedBy

U2 - 10.1016/j.susc.2012.03.004

DO - 10.1016/j.susc.2012.03.004

M3 - Article

AN - SCOPUS:84861874288

SN - 0039-6028

VL - 606

SP - L51-L54

JO - Surface Science

JF - Surface Science

IS - 15-16

ER -

N ₂-plasma nitridation on Si(111): Its effect on crystalline silicon nitride growth

Abstract

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