N+-GaN formed by Si implantation into p-GaN

J. K. Sheu, C. J. Tun, M. S. Tsai, C. C. Lee, G. C. Chi, S. J. Chang, Y. K. Su

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52 Citations (Scopus)

Abstract

28Si+ implantation into Mg-doped GaN, followed by thermal annealing in N2 was performed to achieve n+-GaN layers. Multiple implantation was used to form a uniform Si implanted region. It was found that the carrier concentration of the films changed from 3×1017cm-3 (p-type) to 5×1019cm-3 (n-type) when the samples were annealed in N2 ambient at 1000°C. The activation efficiency of Si in Mg-doped GaN was as high as 27%. In addition, planar GaN n+-p junctions formed by Si-implanted GaN:Mg were also achieved.

Original languageEnglish
Pages (from-to)1845-1848
Number of pages4
JournalJournal of Applied Physics
Volume91
Issue number3
DOIs
Publication statusPublished - 2002 Feb 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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