Nano-particle interaction during chemical-mechanical polishing

Dedy Ng; Milind Kulkarni; Hong Liang; Yeau Ren Jeng; Pai Yau Huang

doi:10.1115/wtc2005-63591

Nano-particle interaction during chemical-mechanical polishing

Dedy Ng, Milind Kulkarni, Hong Liang, Yeau Ren Jeng, Pai Yau Huang

Department of Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate the particle adhering and removal processes during CMP and post-CMP cleaning. The mechanical interaction between abrasive particles and wafer surface was studied using a microcontact wear model. This model considers the particle effects between the polishing interfaces during load balancing. Experimental results on polishing and cleaning are compared with numerical analysis. This study suggests that during post-CMP cleaning, a combined effort in chemical and mechanical interaction (tribochemical interactions) would be effective in removal small particles during cleaning. For large particles, more mechanical forces would be more effective.

Original language	English
Title of host publication	Proceedings of the World Tribology Congress III - 2005
Publisher	American Society of Mechanical Engineers
Pages	389-390
Number of pages	2
ISBN (Print)	0791842029, 9780791842027
DOIs	https://doi.org/10.1115/wtc2005-63591
Publication status	Published - 2005
Event	2005 World Tribology Congress III - Washington, D.C., United States Duration: 2005 Sept 12 → 2005 Sept 16

Publication series

Name	Proceedings of the World Tribology Congress III - 2005

Other

Other	2005 World Tribology Congress III
Country/Territory	United States
City	Washington, D.C.
Period	05-09-12 → 05-09-16

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1115/wtc2005-63591

Cite this

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title = "Nano-particle interaction during chemical-mechanical polishing",

abstract = "We investigate the particle adhering and removal processes during CMP and post-CMP cleaning. The mechanical interaction between abrasive particles and wafer surface was studied using a microcontact wear model. This model considers the particle effects between the polishing interfaces during load balancing. Experimental results on polishing and cleaning are compared with numerical analysis. This study suggests that during post-CMP cleaning, a combined effort in chemical and mechanical interaction (tribochemical interactions) would be effective in removal small particles during cleaning. For large particles, more mechanical forces would be more effective.",

author = "Dedy Ng and Milind Kulkarni and Hong Liang and Jeng, {Yeau Ren} and Huang, {Pai Yau}",

year = "2005",

doi = "10.1115/wtc2005-63591",

language = "English",

isbn = "0791842029",

series = "Proceedings of the World Tribology Congress III - 2005",

publisher = "American Society of Mechanical Engineers",

pages = "389--390",

booktitle = "Proceedings of the World Tribology Congress III - 2005",

note = "2005 World Tribology Congress III ; Conference date: 12-09-2005 Through 16-09-2005",

}

Ng, D, Kulkarni, M, Liang, H, Jeng, YR & Huang, PY 2005, Nano-particle interaction during chemical-mechanical polishing. in Proceedings of the World Tribology Congress III - 2005. Proceedings of the World Tribology Congress III - 2005, American Society of Mechanical Engineers, pp. 389-390, 2005 World Tribology Congress III, Washington, D.C., United States, 05-09-12. https://doi.org/10.1115/wtc2005-63591

Nano-particle interaction during chemical-mechanical polishing. / Ng, Dedy; Kulkarni, Milind; Liang, Hong et al.
Proceedings of the World Tribology Congress III - 2005. American Society of Mechanical Engineers, 2005. p. 389-390 (Proceedings of the World Tribology Congress III - 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Nano-particle interaction during chemical-mechanical polishing

AU - Ng, Dedy

AU - Kulkarni, Milind

AU - Liang, Hong

AU - Jeng, Yeau Ren

AU - Huang, Pai Yau

PY - 2005

Y1 - 2005

N2 - We investigate the particle adhering and removal processes during CMP and post-CMP cleaning. The mechanical interaction between abrasive particles and wafer surface was studied using a microcontact wear model. This model considers the particle effects between the polishing interfaces during load balancing. Experimental results on polishing and cleaning are compared with numerical analysis. This study suggests that during post-CMP cleaning, a combined effort in chemical and mechanical interaction (tribochemical interactions) would be effective in removal small particles during cleaning. For large particles, more mechanical forces would be more effective.

AB - We investigate the particle adhering and removal processes during CMP and post-CMP cleaning. The mechanical interaction between abrasive particles and wafer surface was studied using a microcontact wear model. This model considers the particle effects between the polishing interfaces during load balancing. Experimental results on polishing and cleaning are compared with numerical analysis. This study suggests that during post-CMP cleaning, a combined effort in chemical and mechanical interaction (tribochemical interactions) would be effective in removal small particles during cleaning. For large particles, more mechanical forces would be more effective.

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U2 - 10.1115/wtc2005-63591

DO - 10.1115/wtc2005-63591

M3 - Conference contribution

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SN - 9780791842027

T3 - Proceedings of the World Tribology Congress III - 2005

SP - 389

EP - 390

BT - Proceedings of the World Tribology Congress III - 2005

PB - American Society of Mechanical Engineers

T2 - 2005 World Tribology Congress III

Y2 - 12 September 2005 through 16 September 2005

ER -

Nano-particle interaction during chemical-mechanical polishing

Abstract

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Other

All Science Journal Classification (ASJC) codes

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