Nano-scale Recessed Asymmetric Schottky Contacted CMOS

Yaohui Zhang, Ruigang Li, Sung Kwon Hong, Kang L. Wang, Bich Yen Nguyen, Kuntal Joardar, Daniel Pham, Wei Yao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A new CMOS device architecture named as Recessed Asymmetric Schottky Contacted CMOS (RASC-CMOS) has been proposed and simulated by using commercial version device simulator DESSIS 6.1. RASC-CMOS can eliminate the two critical drawbacks of conventional Schottky contacted CMOS (SC-CMOS): 1) unacceptable off-state current (> 10 nA/μm), 2) strong short-channel effects when the feature size of SC-CMOS scaled down to 10 nm. In the meantime, RASC-CMOS has kept the advantage of with extremely simplified fabrication process of SC-CMOS.

Original languageEnglish
Title of host publicationProceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
PublisherIEEE Computer Society
Pages195-200
Number of pages6
ISBN (Electronic)0780372158
DOIs
Publication statusPublished - 2001
Event1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 - Maui, United States
Duration: 2001 Oct 282001 Oct 30

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2001-January
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
CountryUnited States
CityMaui
Period01-10-2801-10-30

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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