Nano-scale Recessed Asymmetric Schottky Contacted CMOS

Yaohui Zhang; Ruigang Li; Sung Kwon Hong; Kang L. Wang; Bich Yen Nguyen; Kuntal Joardar; Daniel Pham; Wei Yao

doi:10.1109/NANO.2001.966418

Nano-scale Recessed Asymmetric Schottky Contacted CMOS

Yaohui Zhang, Ruigang Li, Sung Kwon Hong, Kang L. Wang, Bich Yen Nguyen, Kuntal Joardar, Daniel Pham, Wei Yao

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

A new CMOS device architecture named as Recessed Asymmetric Schottky Contacted CMOS (RASC-CMOS) has been proposed and simulated by using commercial version device simulator DESSIS 6.1. RASC-CMOS can eliminate the two critical drawbacks of conventional Schottky contacted CMOS (SC-CMOS): 1) unacceptable off-state current (> 10 nA/μm), 2) strong short-channel effects when the feature size of SC-CMOS scaled down to 10 nm. In the meantime, RASC-CMOS has kept the advantage of with extremely simplified fabrication process of SC-CMOS.

Original language	English
Title of host publication	Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
Publisher	IEEE Computer Society
Pages	195-200
Number of pages	6
ISBN (Electronic)	0780372158
DOIs	https://doi.org/10.1109/NANO.2001.966418
Publication status	Published - 2001
Event	1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 - Maui, United States Duration: 2001 Oct 28 → 2001 Oct 30

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2001-January
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
Country/Territory	United States
City	Maui
Period	01-10-28 → 01-10-30

All Science Journal Classification (ASJC) codes

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

Access to Document

10.1109/NANO.2001.966418

Cite this

Zhang, Y., Li, R., Hong, S. K., Wang, K. L., Nguyen, B. Y., Joardar, K., Pham, D., & Yao, W. (2001). Nano-scale Recessed Asymmetric Schottky Contacted CMOS. In Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 (pp. 195-200). Article 966418 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2001-January). IEEE Computer Society. https://doi.org/10.1109/NANO.2001.966418

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title = "Nano-scale Recessed Asymmetric Schottky Contacted CMOS",

abstract = "A new CMOS device architecture named as Recessed Asymmetric Schottky Contacted CMOS (RASC-CMOS) has been proposed and simulated by using commercial version device simulator DESSIS 6.1. RASC-CMOS can eliminate the two critical drawbacks of conventional Schottky contacted CMOS (SC-CMOS): 1) unacceptable off-state current (> 10 nA/μm), 2) strong short-channel effects when the feature size of SC-CMOS scaled down to 10 nm. In the meantime, RASC-CMOS has kept the advantage of with extremely simplified fabrication process of SC-CMOS.",

author = "Yaohui Zhang and Ruigang Li and Hong, {Sung Kwon} and Wang, {Kang L.} and Nguyen, {Bich Yen} and Kuntal Joardar and Daniel Pham and Wei Yao",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 ; Conference date: 28-10-2001 Through 30-10-2001",

year = "2001",

doi = "10.1109/NANO.2001.966418",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

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booktitle = "Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001",

address = "United States",

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Zhang, Y, Li, R, Hong, SK, Wang, KL, Nguyen, BY, Joardar, K, Pham, D & Yao, W 2001, Nano-scale Recessed Asymmetric Schottky Contacted CMOS. in Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001., 966418, Proceedings of the IEEE Conference on Nanotechnology, vol. 2001-January, IEEE Computer Society, pp. 195-200, 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001, Maui, United States, 01-10-28. https://doi.org/10.1109/NANO.2001.966418

Nano-scale Recessed Asymmetric Schottky Contacted CMOS. / Zhang, Yaohui; Li, Ruigang; Hong, Sung Kwon et al.
Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001. IEEE Computer Society, 2001. p. 195-200 966418 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2001-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Nano-scale Recessed Asymmetric Schottky Contacted CMOS

AU - Zhang, Yaohui

AU - Li, Ruigang

AU - Hong, Sung Kwon

AU - Wang, Kang L.

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AU - Joardar, Kuntal

AU - Pham, Daniel

AU - Yao, Wei

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N2 - A new CMOS device architecture named as Recessed Asymmetric Schottky Contacted CMOS (RASC-CMOS) has been proposed and simulated by using commercial version device simulator DESSIS 6.1. RASC-CMOS can eliminate the two critical drawbacks of conventional Schottky contacted CMOS (SC-CMOS): 1) unacceptable off-state current (> 10 nA/μm), 2) strong short-channel effects when the feature size of SC-CMOS scaled down to 10 nm. In the meantime, RASC-CMOS has kept the advantage of with extremely simplified fabrication process of SC-CMOS.

AB - A new CMOS device architecture named as Recessed Asymmetric Schottky Contacted CMOS (RASC-CMOS) has been proposed and simulated by using commercial version device simulator DESSIS 6.1. RASC-CMOS can eliminate the two critical drawbacks of conventional Schottky contacted CMOS (SC-CMOS): 1) unacceptable off-state current (> 10 nA/μm), 2) strong short-channel effects when the feature size of SC-CMOS scaled down to 10 nm. In the meantime, RASC-CMOS has kept the advantage of with extremely simplified fabrication process of SC-CMOS.

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Nano-scale Recessed Asymmetric Schottky Contacted CMOS

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