Abstract
We have demonstrated nano-structured Cu(In,Al)Se2 (CIAS) near-infrared (NIR) photodetectors (PDs). The CIAS NIR PDs were fabricated on ZnO nanowires (NWs)/ZnO/Mo/ITO (indium tin oxide) glass substrate. CIAS film acted as a sensing layer and sparse ZnSe NWs, which were converted from ZnO NWs after selenization process, were embedded in the CIAS film to improve the amplification performance of the NIR PDs. X-ray diffraction patterns show that the CIAS film is a single phased polycrystalline film. Scanning electron microscopy was used to examine the morphology of the CIAS film and the growth of NWs. Two detection schemes, plain Al-CIAS-Al metal-semiconductor-metal structure and vertical structure with CIAS/ZnSe NWs annular p-n junctions, were studied. The nano-structured NIR PDs demonstrate two orders of magnitude for the annular p-n junction and one order of magnitude for the MSM structure in photocurrent amplification. The responsivities of the PDs using both sensing structures have the same cut-off frequency near 790 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 238-241 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 529 |
| DOIs | |
| Publication status | Published - 2013 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Nano-structured Cu(In,Al)Se2 near-infrared photodetectors. / Chang, Ruo Ping; Perng, Dung-Ching.
In: Thin Solid Films, Vol. 529, 01.02.2013, p. 238-241.Research output: Contribution to journal › Article
TY - JOUR
T1 - Nano-structured Cu(In,Al)Se2 near-infrared photodetectors
AU - Chang, Ruo Ping
AU - Perng, Dung-Ching
PY - 2013/2/1
Y1 - 2013/2/1
N2 - We have demonstrated nano-structured Cu(In,Al)Se2 (CIAS) near-infrared (NIR) photodetectors (PDs). The CIAS NIR PDs were fabricated on ZnO nanowires (NWs)/ZnO/Mo/ITO (indium tin oxide) glass substrate. CIAS film acted as a sensing layer and sparse ZnSe NWs, which were converted from ZnO NWs after selenization process, were embedded in the CIAS film to improve the amplification performance of the NIR PDs. X-ray diffraction patterns show that the CIAS film is a single phased polycrystalline film. Scanning electron microscopy was used to examine the morphology of the CIAS film and the growth of NWs. Two detection schemes, plain Al-CIAS-Al metal-semiconductor-metal structure and vertical structure with CIAS/ZnSe NWs annular p-n junctions, were studied. The nano-structured NIR PDs demonstrate two orders of magnitude for the annular p-n junction and one order of magnitude for the MSM structure in photocurrent amplification. The responsivities of the PDs using both sensing structures have the same cut-off frequency near 790 nm.
AB - We have demonstrated nano-structured Cu(In,Al)Se2 (CIAS) near-infrared (NIR) photodetectors (PDs). The CIAS NIR PDs were fabricated on ZnO nanowires (NWs)/ZnO/Mo/ITO (indium tin oxide) glass substrate. CIAS film acted as a sensing layer and sparse ZnSe NWs, which were converted from ZnO NWs after selenization process, were embedded in the CIAS film to improve the amplification performance of the NIR PDs. X-ray diffraction patterns show that the CIAS film is a single phased polycrystalline film. Scanning electron microscopy was used to examine the morphology of the CIAS film and the growth of NWs. Two detection schemes, plain Al-CIAS-Al metal-semiconductor-metal structure and vertical structure with CIAS/ZnSe NWs annular p-n junctions, were studied. The nano-structured NIR PDs demonstrate two orders of magnitude for the annular p-n junction and one order of magnitude for the MSM structure in photocurrent amplification. The responsivities of the PDs using both sensing structures have the same cut-off frequency near 790 nm.
UR - http://www.scopus.com/inward/record.url?scp=84873726358&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873726358&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2012.07.134
DO - 10.1016/j.tsf.2012.07.134
M3 - Article
AN - SCOPUS:84873726358
VL - 529
SP - 238
EP - 241
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -