Nano-structured Cu(In,Al)Se2 near-infrared photodetectors

Ruo Ping Chang, Dung-Ching Perng

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have demonstrated nano-structured Cu(In,Al)Se2 (CIAS) near-infrared (NIR) photodetectors (PDs). The CIAS NIR PDs were fabricated on ZnO nanowires (NWs)/ZnO/Mo/ITO (indium tin oxide) glass substrate. CIAS film acted as a sensing layer and sparse ZnSe NWs, which were converted from ZnO NWs after selenization process, were embedded in the CIAS film to improve the amplification performance of the NIR PDs. X-ray diffraction patterns show that the CIAS film is a single phased polycrystalline film. Scanning electron microscopy was used to examine the morphology of the CIAS film and the growth of NWs. Two detection schemes, plain Al-CIAS-Al metal-semiconductor-metal structure and vertical structure with CIAS/ZnSe NWs annular p-n junctions, were studied. The nano-structured NIR PDs demonstrate two orders of magnitude for the annular p-n junction and one order of magnitude for the MSM structure in photocurrent amplification. The responsivities of the PDs using both sensing structures have the same cut-off frequency near 790 nm.

Original languageEnglish
Pages (from-to)238-241
Number of pages4
JournalThin Solid Films
Volume529
DOIs
Publication statusPublished - 2013 Feb 1

Fingerprint

Photodetectors
Nanowires
photometers
nanowires
Infrared radiation
ITO glass
p-n junctions
Amplification
Metals
MSM (semiconductors)
Cutoff frequency
ITO (semiconductors)
Photocurrents
plains
indium oxides
metals
Diffraction patterns
tin oxides
photocurrents
cut-off

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "We have demonstrated nano-structured Cu(In,Al)Se2 (CIAS) near-infrared (NIR) photodetectors (PDs). The CIAS NIR PDs were fabricated on ZnO nanowires (NWs)/ZnO/Mo/ITO (indium tin oxide) glass substrate. CIAS film acted as a sensing layer and sparse ZnSe NWs, which were converted from ZnO NWs after selenization process, were embedded in the CIAS film to improve the amplification performance of the NIR PDs. X-ray diffraction patterns show that the CIAS film is a single phased polycrystalline film. Scanning electron microscopy was used to examine the morphology of the CIAS film and the growth of NWs. Two detection schemes, plain Al-CIAS-Al metal-semiconductor-metal structure and vertical structure with CIAS/ZnSe NWs annular p-n junctions, were studied. The nano-structured NIR PDs demonstrate two orders of magnitude for the annular p-n junction and one order of magnitude for the MSM structure in photocurrent amplification. The responsivities of the PDs using both sensing structures have the same cut-off frequency near 790 nm.",
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Nano-structured Cu(In,Al)Se2 near-infrared photodetectors. / Chang, Ruo Ping; Perng, Dung-Ching.

In: Thin Solid Films, Vol. 529, 01.02.2013, p. 238-241.

Research output: Contribution to journalArticle

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