Nanocrystalline Ge in SiO2 by annealing of GexSi 1-xO2 in hydrogen

W. S. Liu, Jen-Sue Chen, M. A. Nicolet, V. Arbet-Engels, K. L. Wang

Research output: Contribution to journalArticle

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Abstract

We have synthesized nanocrystalline Ge in vitreous SiO2 by annealing amorphous Ge0.38Si0.62O2 in hydrogen at 700°C. The germanium dioxide in Ge0.38Si0.62O 2 is thermodynamically unstable in the presence of hydrogen and thus precipitates out as elemental Ge. Elemental Si is not needed in this reduction process. Cross-sectional transmission electron microscopy reveals that the nucleation process is homogeneous, leading to a uniform distribution of small Ge crystallites imbedded in the remaining vitreous SiO2.

Original languageEnglish
Pages (from-to)3321-3323
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number25
DOIs
Publication statusPublished - 1993 Dec 1

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annealing
hydrogen
dioxides
crystallites
precipitates
germanium
nucleation
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Liu, W. S., Chen, J-S., Nicolet, M. A., Arbet-Engels, V., & Wang, K. L. (1993). Nanocrystalline Ge in SiO2 by annealing of GexSi 1-xO2 in hydrogen. Applied Physics Letters, 62(25), 3321-3323. https://doi.org/10.1063/1.109058
Liu, W. S. ; Chen, Jen-Sue ; Nicolet, M. A. ; Arbet-Engels, V. ; Wang, K. L. / Nanocrystalline Ge in SiO2 by annealing of GexSi 1-xO2 in hydrogen. In: Applied Physics Letters. 1993 ; Vol. 62, No. 25. pp. 3321-3323.
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Liu, WS, Chen, J-S, Nicolet, MA, Arbet-Engels, V & Wang, KL 1993, 'Nanocrystalline Ge in SiO2 by annealing of GexSi 1-xO2 in hydrogen', Applied Physics Letters, vol. 62, no. 25, pp. 3321-3323. https://doi.org/10.1063/1.109058

Nanocrystalline Ge in SiO2 by annealing of GexSi 1-xO2 in hydrogen. / Liu, W. S.; Chen, Jen-Sue; Nicolet, M. A.; Arbet-Engels, V.; Wang, K. L.

In: Applied Physics Letters, Vol. 62, No. 25, 01.12.1993, p. 3321-3323.

Research output: Contribution to journalArticle

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AU - Chen, Jen-Sue

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AU - Wang, K. L.

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