Nanoindentation behaviour and annealed microstructural evolution of Ni/Si thin film

Woei-Shyan Lee, Tao Hsing Chen, Chi Feng Lin, Jyun Ming Chen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The nano-mechanical properties of as-deposited Ni/Si thin films indented to a maximum depth of 800 nm are measured using a nanoindentation technique. The microstructural evolutions of the indented as-deposited specimens and indented specimens annealed at 200°C, 300°C, 500°C and 800°C for 2min, respectively, are examined via transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). The loading curve for the as-deposited Ni/Si thin film is found to be continuous. However, the unloading curve has a prominent pop-out feature. The hardness and Young's modulus of the Ni/Si thin film are found to vary with the nanoindentation depth, and have values of 13 GPa and 177 GPa, respectively, at the maximum depth of 800 nm. The deformation induced in the nanoindentation process causes the microstructure of the indented zone in the as-deposited thin film to transform from a diamond cubic structure to a mixed structure comprising both amorphous phase and metastable Si III and Si XII phases. However, after annealing at temperatures of 200°C∼500°C and 800°C, the microstructure within the indented zone contains only Si III and Si XII phases and epitaxial NiSi 2 phase, respectively. The annealing process prompts the formation of nickel silicides at the Ni/Si interface. The silicides have the form of Ni 2 Si in the samples annealed at 200°C, but transform to low-resistivity NiSi at annealing temperatures of 300°C or 500°C. At the highest annealing temperature of 800°C, the NiSi phases are replaced by high-resistivity NiSi 2 phases.

Original languageEnglish
Pages (from-to)1374-1380
Number of pages7
JournalMaterials Transactions
Volume52
Issue number7
DOIs
Publication statusPublished - 2011 Jul 1

Fingerprint

Microstructural evolution
Nanoindentation
nanoindentation
Annealing
Thin films
Silicides
annealing
silicides
thin films
microstructure
Microstructure
Diamond
electrical resistivity
unloading
curves
Nickel
Unloading
Temperature
temperature
Raman scattering

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Woei-Shyan ; Chen, Tao Hsing ; Lin, Chi Feng ; Chen, Jyun Ming. / Nanoindentation behaviour and annealed microstructural evolution of Ni/Si thin film. In: Materials Transactions. 2011 ; Vol. 52, No. 7. pp. 1374-1380.
@article{3e587d0c49264212bb601c19772a6b7a,
title = "Nanoindentation behaviour and annealed microstructural evolution of Ni/Si thin film",
abstract = "The nano-mechanical properties of as-deposited Ni/Si thin films indented to a maximum depth of 800 nm are measured using a nanoindentation technique. The microstructural evolutions of the indented as-deposited specimens and indented specimens annealed at 200°C, 300°C, 500°C and 800°C for 2min, respectively, are examined via transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). The loading curve for the as-deposited Ni/Si thin film is found to be continuous. However, the unloading curve has a prominent pop-out feature. The hardness and Young's modulus of the Ni/Si thin film are found to vary with the nanoindentation depth, and have values of 13 GPa and 177 GPa, respectively, at the maximum depth of 800 nm. The deformation induced in the nanoindentation process causes the microstructure of the indented zone in the as-deposited thin film to transform from a diamond cubic structure to a mixed structure comprising both amorphous phase and metastable Si III and Si XII phases. However, after annealing at temperatures of 200°C∼500°C and 800°C, the microstructure within the indented zone contains only Si III and Si XII phases and epitaxial NiSi 2 phase, respectively. The annealing process prompts the formation of nickel silicides at the Ni/Si interface. The silicides have the form of Ni 2 Si in the samples annealed at 200°C, but transform to low-resistivity NiSi at annealing temperatures of 300°C or 500°C. At the highest annealing temperature of 800°C, the NiSi phases are replaced by high-resistivity NiSi 2 phases.",
author = "Woei-Shyan Lee and Chen, {Tao Hsing} and Lin, {Chi Feng} and Chen, {Jyun Ming}",
year = "2011",
month = "7",
day = "1",
doi = "10.2320/matertrans.M2010323",
language = "English",
volume = "52",
pages = "1374--1380",
journal = "Materials Transactions",
issn = "0916-1821",
publisher = "Japan Institute of Metals (JIM)",
number = "7",

}

Nanoindentation behaviour and annealed microstructural evolution of Ni/Si thin film. / Lee, Woei-Shyan; Chen, Tao Hsing; Lin, Chi Feng; Chen, Jyun Ming.

In: Materials Transactions, Vol. 52, No. 7, 01.07.2011, p. 1374-1380.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nanoindentation behaviour and annealed microstructural evolution of Ni/Si thin film

AU - Lee, Woei-Shyan

AU - Chen, Tao Hsing

AU - Lin, Chi Feng

AU - Chen, Jyun Ming

PY - 2011/7/1

Y1 - 2011/7/1

N2 - The nano-mechanical properties of as-deposited Ni/Si thin films indented to a maximum depth of 800 nm are measured using a nanoindentation technique. The microstructural evolutions of the indented as-deposited specimens and indented specimens annealed at 200°C, 300°C, 500°C and 800°C for 2min, respectively, are examined via transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). The loading curve for the as-deposited Ni/Si thin film is found to be continuous. However, the unloading curve has a prominent pop-out feature. The hardness and Young's modulus of the Ni/Si thin film are found to vary with the nanoindentation depth, and have values of 13 GPa and 177 GPa, respectively, at the maximum depth of 800 nm. The deformation induced in the nanoindentation process causes the microstructure of the indented zone in the as-deposited thin film to transform from a diamond cubic structure to a mixed structure comprising both amorphous phase and metastable Si III and Si XII phases. However, after annealing at temperatures of 200°C∼500°C and 800°C, the microstructure within the indented zone contains only Si III and Si XII phases and epitaxial NiSi 2 phase, respectively. The annealing process prompts the formation of nickel silicides at the Ni/Si interface. The silicides have the form of Ni 2 Si in the samples annealed at 200°C, but transform to low-resistivity NiSi at annealing temperatures of 300°C or 500°C. At the highest annealing temperature of 800°C, the NiSi phases are replaced by high-resistivity NiSi 2 phases.

AB - The nano-mechanical properties of as-deposited Ni/Si thin films indented to a maximum depth of 800 nm are measured using a nanoindentation technique. The microstructural evolutions of the indented as-deposited specimens and indented specimens annealed at 200°C, 300°C, 500°C and 800°C for 2min, respectively, are examined via transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). The loading curve for the as-deposited Ni/Si thin film is found to be continuous. However, the unloading curve has a prominent pop-out feature. The hardness and Young's modulus of the Ni/Si thin film are found to vary with the nanoindentation depth, and have values of 13 GPa and 177 GPa, respectively, at the maximum depth of 800 nm. The deformation induced in the nanoindentation process causes the microstructure of the indented zone in the as-deposited thin film to transform from a diamond cubic structure to a mixed structure comprising both amorphous phase and metastable Si III and Si XII phases. However, after annealing at temperatures of 200°C∼500°C and 800°C, the microstructure within the indented zone contains only Si III and Si XII phases and epitaxial NiSi 2 phase, respectively. The annealing process prompts the formation of nickel silicides at the Ni/Si interface. The silicides have the form of Ni 2 Si in the samples annealed at 200°C, but transform to low-resistivity NiSi at annealing temperatures of 300°C or 500°C. At the highest annealing temperature of 800°C, the NiSi phases are replaced by high-resistivity NiSi 2 phases.

UR - http://www.scopus.com/inward/record.url?scp=80052232262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052232262&partnerID=8YFLogxK

U2 - 10.2320/matertrans.M2010323

DO - 10.2320/matertrans.M2010323

M3 - Article

VL - 52

SP - 1374

EP - 1380

JO - Materials Transactions

JF - Materials Transactions

SN - 0916-1821

IS - 7

ER -