Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates

Meng Hung Lin, Hua Chiang Wen, Chih Yung Huang, Yeau-Ren Jeng, Wei Hung Yau, Wen Fa Wu, Chang Pin Chou

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Gallium nitride (GaN) epilayers was deposited on a-axis sapphire substrate by means of metal-organic chemical vapor deposition (MOCVD) method. The GaN epilayers has been investigated in their repetition pressure-induced impairment events from nanoindentation technique and, the relative deformation effect was observed from atomic force microscopy (AFM). From the morphological studies, it is revealed that none of crack and particle was found even after the indentation beyond the critical depth on the residual indentation impression. The 'pop-in' event was explained by the interaction of the deformed region, produced by the indenter tip, with the inner threading dislocations in the GaN films. Pop-in events indicate the generation and motion of individual dislocation, which is measured under critical depth and, no residual deformation of the GaN films is observed.

Original languageEnglish
Pages (from-to)3464-3467
Number of pages4
JournalApplied Surface Science
Volume256
Issue number11
DOIs
Publication statusPublished - 2010 Mar 15

Fingerprint

Gallium nitride
Aluminum Oxide
Epilayers
gallium nitrides
Nanoindentation
nanoindentation
Sapphire
sapphire
Substrates
indentation
Indentation
Organic Chemicals
impairment
Organic chemicals
metalorganic chemical vapor deposition
Chemical vapor deposition
Atomic force microscopy
repetition
cracks
Metals

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Lin, M. H., Wen, H. C., Huang, C. Y., Jeng, Y-R., Yau, W. H., Wu, W. F., & Chou, C. P. (2010). Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates. Applied Surface Science, 256(11), 3464-3467. https://doi.org/10.1016/j.apsusc.2009.12.054
Lin, Meng Hung ; Wen, Hua Chiang ; Huang, Chih Yung ; Jeng, Yeau-Ren ; Yau, Wei Hung ; Wu, Wen Fa ; Chou, Chang Pin. / Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates. In: Applied Surface Science. 2010 ; Vol. 256, No. 11. pp. 3464-3467.
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Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates. / Lin, Meng Hung; Wen, Hua Chiang; Huang, Chih Yung; Jeng, Yeau-Ren; Yau, Wei Hung; Wu, Wen Fa; Chou, Chang Pin.

In: Applied Surface Science, Vol. 256, No. 11, 15.03.2010, p. 3464-3467.

Research output: Contribution to journalArticle

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T1 - Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates

AU - Lin, Meng Hung

AU - Wen, Hua Chiang

AU - Huang, Chih Yung

AU - Jeng, Yeau-Ren

AU - Yau, Wei Hung

AU - Wu, Wen Fa

AU - Chou, Chang Pin

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AB - Gallium nitride (GaN) epilayers was deposited on a-axis sapphire substrate by means of metal-organic chemical vapor deposition (MOCVD) method. The GaN epilayers has been investigated in their repetition pressure-induced impairment events from nanoindentation technique and, the relative deformation effect was observed from atomic force microscopy (AFM). From the morphological studies, it is revealed that none of crack and particle was found even after the indentation beyond the critical depth on the residual indentation impression. The 'pop-in' event was explained by the interaction of the deformed region, produced by the indenter tip, with the inner threading dislocations in the GaN films. Pop-in events indicate the generation and motion of individual dislocation, which is measured under critical depth and, no residual deformation of the GaN films is observed.

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