TY - GEN
T1 - Nanoindentation characterization of PECVD silicon nitride on silicon subjected to mechanical fatigue loading
AU - Huang, Z. K.
AU - Ou, K. S.
AU - Chen, K. S.
N1 - Funding Information:
This work is supported by National Science Council under the contracts NSC 96-2628-E-006-006-MY3 and NSC 97-2221-E006-1582-MY3.
PY - 2011
Y1 - 2011
N2 - In this work, the mechanical properties of PECVD silicon nitride deposited on silicon substrates by two different processing conditions were investigated. Indentation method was primary used for qualitatively examining the effect of process conditions to the achieved mechanical properties. The experimental results indicated that the residual stress, fracture toughness and interfacial strength, as well as the fatigue crack propagation were strongly depended on the processing conditions such as deposition temperatures and chamber pressures. Preliminary results indicated that the specimen deposited at a lower temperature and a lower pressure exhibited a much less residual tensile stress and a better interface strength. On the other hand, it was found that RTA could enhance the interfacial strength but the generated high tensile strength could actually reduce the equivalent toughness and leads to structural reliability concerns. In summary, the characterization results should be possible to provide useful information for correlating the mechanical reliability with the processing parameters for future structural design optimization and for improving the structural integrity of PECVD silicon nitride films for MEMS and IC fabrication.
AB - In this work, the mechanical properties of PECVD silicon nitride deposited on silicon substrates by two different processing conditions were investigated. Indentation method was primary used for qualitatively examining the effect of process conditions to the achieved mechanical properties. The experimental results indicated that the residual stress, fracture toughness and interfacial strength, as well as the fatigue crack propagation were strongly depended on the processing conditions such as deposition temperatures and chamber pressures. Preliminary results indicated that the specimen deposited at a lower temperature and a lower pressure exhibited a much less residual tensile stress and a better interface strength. On the other hand, it was found that RTA could enhance the interfacial strength but the generated high tensile strength could actually reduce the equivalent toughness and leads to structural reliability concerns. In summary, the characterization results should be possible to provide useful information for correlating the mechanical reliability with the processing parameters for future structural design optimization and for improving the structural integrity of PECVD silicon nitride films for MEMS and IC fabrication.
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U2 - 10.1557/opl.2011.64
DO - 10.1557/opl.2011.64
M3 - Conference contribution
AN - SCOPUS:80053218596
SN - 9781605112763
T3 - Materials Research Society Symposium Proceedings
SP - 173
EP - 178
BT - Microelectromechanical Systems - Materials and Devices IV
T2 - 2010 MRS Fall Meeting
Y2 - 29 November 2010 through 3 December 2010
ER -