Abstract
We have demonstrated that silicon nanostructures with high aspect ratios, having ∼400nm structural height and ∼55nm lateral dimension, may be fabricated by scanning probe lithography and aqueous KOH orientation-dependent etching on the H-passivated (110) Si wafer. The high spatial resolution of fabricated features is achieved by using the atomic force microscope based nano-oxidation process in ambient. Due to the large (110)/(111) anisotropic ratio of etch rate and the large Si/SiO2 etch selectivity at a relatively low etching temperature and an optimal KOH concentration, high-aspect-ratio gratings with (111)-oriented structural sidewalls as well as hexagonal etch pit structures determined by the terminal etch geometry can be obtained.
Original language | English |
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Pages (from-to) | 2429-2431 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 16 |
DOIs | |
Publication status | Published - 1999 Oct 18 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)