Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching

F. S.S. Chien; C. L. Wu; Y. C. Chou; T. T. Chen; S. Gwo; W. F. Hsieh

doi:10.1063/1.125037

Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching

F. S.S. Chien, C. L. Wu, Y. C. Chou, T. T. Chen, S. Gwo, W. F. Hsieh

Department of Physics

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

We have demonstrated that silicon nanostructures with high aspect ratios, having ∼400nm structural height and ∼55nm lateral dimension, may be fabricated by scanning probe lithography and aqueous KOH orientation-dependent etching on the H-passivated (110) Si wafer. The high spatial resolution of fabricated features is achieved by using the atomic force microscope based nano-oxidation process in ambient. Due to the large (110)/(111) anisotropic ratio of etch rate and the large Si/SiO₂ etch selectivity at a relatively low etching temperature and an optimal KOH concentration, high-aspect-ratio gratings with (111)-oriented structural sidewalls as well as hexagonal etch pit structures determined by the terminal etch geometry can be obtained.

Original language	English
Pages (from-to)	2429-2431
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	16
DOIs	https://doi.org/10.1063/1.125037
Publication status	Published - 1999 Oct 18

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.125037

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@article{8a82c42eeba54faba80580d74eb2a17c,

title = "Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching",

abstract = "We have demonstrated that silicon nanostructures with high aspect ratios, having ∼400nm structural height and ∼55nm lateral dimension, may be fabricated by scanning probe lithography and aqueous KOH orientation-dependent etching on the H-passivated (110) Si wafer. The high spatial resolution of fabricated features is achieved by using the atomic force microscope based nano-oxidation process in ambient. Due to the large (110)/(111) anisotropic ratio of etch rate and the large Si/SiO2 etch selectivity at a relatively low etching temperature and an optimal KOH concentration, high-aspect-ratio gratings with (111)-oriented structural sidewalls as well as hexagonal etch pit structures determined by the terminal etch geometry can be obtained.",

author = "Chien, {F. S.S.} and Wu, {C. L.} and Chou, {Y. C.} and Chen, {T. T.} and S. Gwo and Hsieh, {W. F.}",

year = "1999",

month = oct,

day = "18",

doi = "10.1063/1.125037",

language = "English",

volume = "75",

pages = "2429--2431",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching

AU - Chien, F. S.S.

AU - Wu, C. L.

AU - Chou, Y. C.

AU - Chen, T. T.

AU - Gwo, S.

AU - Hsieh, W. F.

PY - 1999/10/18

Y1 - 1999/10/18

N2 - We have demonstrated that silicon nanostructures with high aspect ratios, having ∼400nm structural height and ∼55nm lateral dimension, may be fabricated by scanning probe lithography and aqueous KOH orientation-dependent etching on the H-passivated (110) Si wafer. The high spatial resolution of fabricated features is achieved by using the atomic force microscope based nano-oxidation process in ambient. Due to the large (110)/(111) anisotropic ratio of etch rate and the large Si/SiO2 etch selectivity at a relatively low etching temperature and an optimal KOH concentration, high-aspect-ratio gratings with (111)-oriented structural sidewalls as well as hexagonal etch pit structures determined by the terminal etch geometry can be obtained.

AB - We have demonstrated that silicon nanostructures with high aspect ratios, having ∼400nm structural height and ∼55nm lateral dimension, may be fabricated by scanning probe lithography and aqueous KOH orientation-dependent etching on the H-passivated (110) Si wafer. The high spatial resolution of fabricated features is achieved by using the atomic force microscope based nano-oxidation process in ambient. Due to the large (110)/(111) anisotropic ratio of etch rate and the large Si/SiO2 etch selectivity at a relatively low etching temperature and an optimal KOH concentration, high-aspect-ratio gratings with (111)-oriented structural sidewalls as well as hexagonal etch pit structures determined by the terminal etch geometry can be obtained.

UR - http://www.scopus.com/inward/record.url?scp=0001092848&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001092848&partnerID=8YFLogxK

U2 - 10.1063/1.125037

DO - 10.1063/1.125037

M3 - Article

AN - SCOPUS:0001092848

VL - 75

SP - 2429

EP - 2431

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -