Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching

F. S.S. Chien, C. L. Wu, Y. C. Chou, T. T. Chen, S. Gwo, W. F. Hsieh

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99 Citations (Scopus)


We have demonstrated that silicon nanostructures with high aspect ratios, having ∼400nm structural height and ∼55nm lateral dimension, may be fabricated by scanning probe lithography and aqueous KOH orientation-dependent etching on the H-passivated (110) Si wafer. The high spatial resolution of fabricated features is achieved by using the atomic force microscope based nano-oxidation process in ambient. Due to the large (110)/(111) anisotropic ratio of etch rate and the large Si/SiO2 etch selectivity at a relatively low etching temperature and an optimal KOH concentration, high-aspect-ratio gratings with (111)-oriented structural sidewalls as well as hexagonal etch pit structures determined by the terminal etch geometry can be obtained.

Original languageEnglish
Pages (from-to)2429-2431
Number of pages3
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 1999 Oct 18

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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