Nanomeasurement and fractal analysis of PZT ferroelectric thin films by atomic force microscopy

Yeau-Ren Jeng, Ping Chi Tsai, Te Hua Fang

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

In this study, the radio frequency (RF) magnetron sputtering process is used to generate a PZT ferroelectric thin film on a silicon substrate. The surface characteristics of this lead zirconate titanate film Pb(Zrx Ti1-x)O3 is then investigated by means of an atomic force microscopy (AFM) method. The relationship between the temperature of the rapid thermal annealing (RTA) process and the characteristics of the resulting microstructure is also examined. Various aspects of the surface are investigated, including its roughness, its microstructure and its fractal characteristics. The results demonstrate that higher annealing temperatures reduce surface roughness and promote increased grain size due to the phase transformations which are induced within the microstructure. The fractal analysis reveals that the fractal dimension, Ds, increases for larger AFM scan images, and that the value of Ds falls within the range 2.10-2.50 depending upon the scanned length/area and is calculated by the structure function. Finally, it is determined that the phase transformations which occur at higher annealing temperatures result in higher fractal dimensions.

Original languageEnglish
Pages (from-to)406-415
Number of pages10
JournalMicroelectronic Engineering
Volume65
Issue number4
DOIs
Publication statusPublished - 2003 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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