Abstract
Modification on silicon (100) surfaces was demonstrated by using an atomic force microscope operating in air. Field-enhanced oxidation on silicon surfaces with protection oxide was done locally by biasing a p-type heavily doped silicon tip between -3 and -10 V. Oxide lines of width as small as ∼10 nm were achieved. After a dip in aqueous HF solution, the oxide was etched away; the modification depth, ∼1 nm, was characterized by the same atomic force microscope. Other field induced reactions for patterning are possible.
Original language | English |
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Pages (from-to) | 2133-2135 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 64 |
Issue number | 16 |
DOIs | |
Publication status | Published - 1994 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)