Nanometer scale patterning of silicon (100) surfaces by an atomic force microscope operating in air

Liming Tsau, Dawen Wang, K. L. Wang

Research output: Contribution to journalArticlepeer-review

59 Citations (Scopus)

Abstract

Modification on silicon (100) surfaces was demonstrated by using an atomic force microscope operating in air. Field-enhanced oxidation on silicon surfaces with protection oxide was done locally by biasing a p-type heavily doped silicon tip between -3 and -10 V. Oxide lines of width as small as ∼10 nm were achieved. After a dip in aqueous HF solution, the oxide was etched away; the modification depth, ∼1 nm, was characterized by the same atomic force microscope. Other field induced reactions for patterning are possible.

Original languageEnglish
Pages (from-to)2133-2135
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number16
DOIs
Publication statusPublished - 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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