Nanoparticle removal mechanisms during post-CMP cleaning

D. Ng, P. Y. Huang, Y. R. Jeng, H. Liang

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

In this research, the synergistic interaction of a brush, an adhered particle, and a wafer surface was evaluated during post chemical mechanical polishing (CMP). The approach includes theoretical analysis combined with experiments. A theoretical model was used to predict the particle/wafer contact area and contact force in order to identify the maximum tangential force required to remove particle agglomerates. Experiments are carried out to validate the analysis and to further study the removal mechanisms. This research suggests that a combined effort between a brush and surfactant would be effective in removing small particles during cleaning. For large particles, the mechanical force would be the dominating factor.

Original languageEnglish
Pages (from-to)H227-H231
JournalElectrochemical and Solid-State Letters
Volume10
Issue number8
DOIs
Publication statusPublished - 2007 Jun 20

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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