Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio

Rongdun Hong; Yi Zhou; Yannan Xie; Xiaping Chen; Zifeng Zhang; Kang L. Wang; Zhengyun Wu

doi:10.1364/OL.37.003651

Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio

Rongdun Hong
, Yi Zhou
, Yannan Xie
, Xiaping Chen
, Zifeng Zhang
, Kang L. Wang
, Zhengyun Wu

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible rejection ratio have been realized in this structure.

Original language	English
Pages (from-to)	3651-3653
Number of pages	3
Journal	Optics Letters
Volume	37
Issue number	17
DOIs	https://doi.org/10.1364/OL.37.003651
Publication status	Published - 2012 Sept 1

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OL.37.003651

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@article{e1af8069828340039dc4189bc74843f3,

title = "Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio",

abstract = "A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible rejection ratio have been realized in this structure.",

author = "Rongdun Hong and Yi Zhou and Yannan Xie and Xiaping Chen and Zifeng Zhang and Wang, \{Kang L.\} and Zhengyun Wu",

year = "2012",

month = sep,

day = "1",

doi = "10.1364/OL.37.003651",

language = "English",

volume = "37",

pages = "3651--3653",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optica Publishing Group (formerly OSA)",

number = "17",

}

TY - JOUR

T1 - Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio

AU - Hong, Rongdun

AU - Zhou, Yi

AU - Xie, Yannan

AU - Chen, Xiaping

AU - Zhang, Zifeng

AU - Wang, Kang L.

AU - Wu, Zhengyun

PY - 2012/9/1

Y1 - 2012/9/1

N2 - A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible rejection ratio have been realized in this structure.

AB - A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible rejection ratio have been realized in this structure.

UR - https://www.scopus.com/pages/publications/84865759490

UR - https://www.scopus.com/pages/publications/84865759490#tab=citedBy

U2 - 10.1364/OL.37.003651

DO - 10.1364/OL.37.003651

M3 - Article

C2 - 22940979

AN - SCOPUS:84865759490

SN - 0146-9592

VL - 37

SP - 3651

EP - 3653

JO - Optics Letters

JF - Optics Letters

IS - 17

ER -

Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio

Abstract

All Science Journal Classification (ASJC) codes

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