Nanoscale control of phase variants in strain-engineered BiFeO3

Rama K. Vasudevan; Yunya Liu; Jiangyu Li; Wen I. Liang; Amit Kumar; Stephen Jesse; Yi Chun Chen; Ying Hao Chu; Valanoor Nagarajan; Sergei V. Kalinin

doi:10.1021/nl201719w

Nanoscale control of phase variants in strain-engineered BiFeO₃

Rama K. Vasudevan, Yunya Liu, Jiangyu Li, Wen I. Liang, Amit Kumar, Stephen Jesse, Yi Chun Chen, Ying Hao Chu, Valanoor Nagarajan, Sergei V. Kalinin

Department of Physics

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

Development of magnetoelectric, electromechanical, and photovoltaic devices based on mixed-phase rhombohedral-tetragonal (R-T) BiFeO₃ (BFO) systems is possible only if the control of the engineered R phase variants is realized. Accordingly, we explore the mechanism of a bias induced phase transformation in this system. Single point spectroscopy demonstrates that the T → R transition is activated at lower voltages compared to T → -T polarization switching. With phase field modeling, the transition is shown to be electrically driven. We further demonstrate that symmetry of formed R-phase rosettes can be broken by a proximal probe motion, allowing controlled creation of R variants with defined orientation. This approach opens a pathway to designing next-generation magnetoelectronic and data storage devices in the nanoscale.

Original language	English
Pages (from-to)	3346-3354
Number of pages	9
Journal	Nano letters
Volume	11
Issue number	8
DOIs	https://doi.org/10.1021/nl201719w
Publication status	Published - 2011 Aug 10

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/nl201719w

Cite this

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title = "Nanoscale control of phase variants in strain-engineered BiFeO3",

abstract = "Development of magnetoelectric, electromechanical, and photovoltaic devices based on mixed-phase rhombohedral-tetragonal (R-T) BiFeO3 (BFO) systems is possible only if the control of the engineered R phase variants is realized. Accordingly, we explore the mechanism of a bias induced phase transformation in this system. Single point spectroscopy demonstrates that the T → R transition is activated at lower voltages compared to T → -T polarization switching. With phase field modeling, the transition is shown to be electrically driven. We further demonstrate that symmetry of formed R-phase rosettes can be broken by a proximal probe motion, allowing controlled creation of R variants with defined orientation. This approach opens a pathway to designing next-generation magnetoelectronic and data storage devices in the nanoscale.",

author = "Vasudevan, {Rama K.} and Yunya Liu and Jiangyu Li and Liang, {Wen I.} and Amit Kumar and Stephen Jesse and Chen, {Yi Chun} and Chu, {Ying Hao} and Valanoor Nagarajan and Kalinin, {Sergei V.}",

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AU - Vasudevan, Rama K.

AU - Liu, Yunya

AU - Li, Jiangyu

AU - Liang, Wen I.

AU - Kumar, Amit

AU - Jesse, Stephen

AU - Chen, Yi Chun

AU - Chu, Ying Hao

AU - Nagarajan, Valanoor

AU - Kalinin, Sergei V.

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AB - Development of magnetoelectric, electromechanical, and photovoltaic devices based on mixed-phase rhombohedral-tetragonal (R-T) BiFeO3 (BFO) systems is possible only if the control of the engineered R phase variants is realized. Accordingly, we explore the mechanism of a bias induced phase transformation in this system. Single point spectroscopy demonstrates that the T → R transition is activated at lower voltages compared to T → -T polarization switching. With phase field modeling, the transition is shown to be electrically driven. We further demonstrate that symmetry of formed R-phase rosettes can be broken by a proximal probe motion, allowing controlled creation of R variants with defined orientation. This approach opens a pathway to designing next-generation magnetoelectronic and data storage devices in the nanoscale.

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