Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on an AlN nanorod-array template

Chen Hung Tsai, Mu Hsin Ma, Yu Feng Yin, Hsiang Wei Li, Wei Chih Lai, Jianjang Huang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid-solid method. The corresponding material quality, including voids near nanorods, Raman spectra, and transmission electron microscopy images, indicates significant improvement.

Original languageEnglish
Article number7066933
JournalIEEE Journal of Quantum Electronics
Volume51
Issue number5
DOIs
Publication statusPublished - 2015 May 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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