Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on an AlN nanorod-array template

Chen Hung Tsai; Mu Hsin Ma; Yu Feng Yin; Hsiang Wei Li; Wei Chih Lai; Jianjang Huang

doi:10.1109/JQE.2015.2412957

Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on an AlN nanorod-array template

Chen Hung Tsai, Mu Hsin Ma, Yu Feng Yin, Hsiang Wei Li, Wei Chih Lai, Jianjang Huang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid-solid method. The corresponding material quality, including voids near nanorods, Raman spectra, and transmission electron microscopy images, indicates significant improvement.

Original language	English
Article number	7066933
Journal	IEEE Journal of Quantum Electronics
Volume	51
Issue number	5
DOIs	https://doi.org/10.1109/JQE.2015.2412957
Publication status	Published - 2015 May 1

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2015.2412957

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abstract = "Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid-solid method. The corresponding material quality, including voids near nanorods, Raman spectra, and transmission electron microscopy images, indicates significant improvement.",

author = "Tsai, {Chen Hung} and Ma, {Mu Hsin} and Yin, {Yu Feng} and Li, {Hsiang Wei} and Lai, {Wei Chih} and Jianjang Huang",

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AU - Yin, Yu Feng

AU - Li, Hsiang Wei

AU - Lai, Wei Chih

AU - Huang, Jianjang

PY - 2015/5/1

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N2 - Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid-solid method. The corresponding material quality, including voids near nanorods, Raman spectra, and transmission electron microscopy images, indicates significant improvement.

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Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on an AlN nanorod-array template

Abstract

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