Nanoscale growth of GaAs on patterned Si(111) substrates by molecular beam epitaxy

Chia Pu Chu, Shamsul Arafin, Tianxiao Nie, Kaiyuan Yao, Xufeng Kou, Liang He, Chiu Yen Wang, Szu Ying Chen, Lih Juann Chen, Syed M. Qasim, Mohammed S. Bensaleh, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


High-quality and defect-free GaAs were successfully grown via molecular beam epitaxy on silicon dioxide patterned Si(111) substrates by a two-step growth technique. Compared with the one-step approach, the two-step growth scheme has been found to be a better pathway to obtain a superior-quality GaAs on Si. Taking advantages of low energy for both Si(111) surface and GaAs/Si(111) interface, the two-step grown GaAs of total ∼175 nm atop patterned Si(111) substrates exhibits atomically smooth surface morphology, single crystallininty and a remarkably low defect density. A low-temperature GaAs nucleation layer of the two-step growth helps relieve the misfit stress by accommodating the misfit dislocations at the very adjacent GaAs/Si interface. The excellent properties of the two-step grown GaAs were investigated and verified by field-emission scanning electron microscopy, atomic force microscopy, X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Finally we demonstrated a GaAs on Si solar cell, which could represent an important milestone for future applications in light-emitting diodes, lasers, and photodetectors on Si.

Original languageEnglish
Pages (from-to)593-598
Number of pages6
JournalCrystal Growth and Design
Issue number2
Publication statusPublished - 2014 Feb 5

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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