Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching

Zhan Shuo Hu, Fei Yi Hung, Shoou Jinn Chang, Bohr Ran Huang, Bo Cheng Lin, Kuan Jen Chen, Wen I. Hsu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

GaN nanotips array was fabricated by an iodine-assist enhanced focused ions beam etching (IFIBE) via the double masks silver oxide (AgO) and gallium oxide (GaO). The function of AgO is used to protect from the elimination of GaO so as to remain GaO on GaN nanotip. The different size of silver cluster was able to assist the formation of GaN nanotips through the double mask process (AgO and GaO). After IFIBE process, the silver mask disappeared and only gallium oxide with a polycrystalline structure was left on top. Oxide-capping GaN nanotips were able to improve the field emission properties (turn-on field was 2.2 V/μm) due to the lower work function of GaN resulted from the distribution of electron existed the interface between GaN and GaO.

Original languageEnglish
Pages (from-to)2360-2363
Number of pages4
JournalJournal of Alloys and Compounds
Volume509
Issue number5
DOIs
Publication statusPublished - 2011 Feb 3

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching'. Together they form a unique fingerprint.

  • Cite this