TY - JOUR
T1 - Nanostructuring and high thermoelectric efficiency in p-type Ag(Pb 1-ySny)mSbTe2+m
AU - Androulakis, John
AU - Hsu, Kuei Fang
AU - Pcionek, Robert
AU - Kong, Huijun
AU - Uher, Ctirad
AU - D'Angelo, Jonathan J.
AU - Downey, Adam
AU - Hogan, Tim
AU - Kanatzidis, Mercouri G.
PY - 2006/5/2
Y1 - 2006/5/2
N2 - The characteristic features of nanostructuring and high thermoelectric (TE) efficiency in p-type Ag(Pb1-ySny)mSbTe 2+m, were analyzed. The search for efficient TE materials focuses on degenerate semiconductors since the underlying physics of these systems allow the coexistence of high thermopower values with high electrical conductivity to achieve high power factors. The electronic-transport properties of the compound system can be tuned primarily through carefully controlling the Pb/Sn ratio. The existence of the Pb/Sn ratio and the Ag and Sb concentration, allows for tuning of the electronic-transport properties and the identification of compositions with very high ZTs. The main advantage of this system is its exceptionally low lattice thermal conductivity.
AB - The characteristic features of nanostructuring and high thermoelectric (TE) efficiency in p-type Ag(Pb1-ySny)mSbTe 2+m, were analyzed. The search for efficient TE materials focuses on degenerate semiconductors since the underlying physics of these systems allow the coexistence of high thermopower values with high electrical conductivity to achieve high power factors. The electronic-transport properties of the compound system can be tuned primarily through carefully controlling the Pb/Sn ratio. The existence of the Pb/Sn ratio and the Ag and Sb concentration, allows for tuning of the electronic-transport properties and the identification of compositions with very high ZTs. The main advantage of this system is its exceptionally low lattice thermal conductivity.
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U2 - 10.1002/adma.200502770
DO - 10.1002/adma.200502770
M3 - Article
AN - SCOPUS:33646533776
SN - 0935-9648
VL - 18
SP - 1170
EP - 1173
JO - Advanced Materials
JF - Advanced Materials
IS - 9
ER -