Nanowire-mask based fabrication of high mobility and low noise graphene nanoribbon short-channel field-effect transistors

G. Xu, J. Bai, C. M. Torres, E. B. Song, J. Tang, Y. Zhou, X. Duan, Y. Zhang, Y. Huang, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Graphene nanoribbon (GNR) is a quasi one-dimensional film, in which a bandgap exists through the quantum confinement and/or localization effect. Compared to bulk graphene, GNR has high potential in achieving high I on/Ioff ratio. The carrier mobility of GNR, however, exhibits strong degradation because of the uncontrollable edge roughness and/or states. Most reported GNR-FETs are patterned using ebeam-lithography processes, where the spot size of the electron beam limits the edge smoothness1. In this work, we present a GNR fabrication method based on a nanowire-mask, where the edge roughness is determined by the surface roughness of the nanowire (<1nm) 2. With four-terminal measurement setup, single layer nanoribbon (SLR) devices show μhole∼1180cm2/(Vs), Ion/Ioff >7 and low frequency noise figure A∼10-6 at 300K. Moreover, short-channel SLR (∼250nm) shows conductance quantization at 77K3, and confirms that the quasi-ballistic transport properties can be achieved through this method.

Original languageEnglish
Title of host publication68th Device Research Conference, DRC 2010
Pages71-72
Number of pages2
DOIs
Publication statusPublished - 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: 2010 Jun 212010 Jun 23

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other68th Device Research Conference, DRC 2010
CountryUnited States
CityNotre Dame, IN
Period10-06-2110-06-23

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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