Narrow fin width effect of HKMG bulk FinFET devices

Chien Hung Chen, Yiming Li, Yu Yu Chen, Chieh Yang Chen, Sheng Chia Hsu, Wen Tsung Huang, Chin Min Yang, Li Wen Chen, Sheng-Yuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages147-150
Number of pages4
Publication statusPublished - 2013 Aug 9
EventNanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
Duration: 2013 May 122013 May 16

Publication series

NameTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume1

Other

OtherNanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
CountryUnited States
CityWashington, DC
Period13-05-1213-05-16

Fingerprint

Silicon
Static Electricity
Equipment and Supplies

All Science Journal Classification (ASJC) codes

  • Biotechnology

Cite this

Chen, C. H., Li, Y., Chen, Y. Y., Chen, C. Y., Hsu, S. C., Huang, W. T., ... Chu, S-Y. (2013). Narrow fin width effect of HKMG bulk FinFET devices. In Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 (pp. 147-150). (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; Vol. 1).
Chen, Chien Hung ; Li, Yiming ; Chen, Yu Yu ; Chen, Chieh Yang ; Hsu, Sheng Chia ; Huang, Wen Tsung ; Yang, Chin Min ; Chen, Li Wen ; Chu, Sheng-Yuan. / Narrow fin width effect of HKMG bulk FinFET devices. Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. 2013. pp. 147-150 (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013).
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title = "Narrow fin width effect of HKMG bulk FinFET devices",
abstract = "In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.",
author = "Chen, {Chien Hung} and Yiming Li and Chen, {Yu Yu} and Chen, {Chieh Yang} and Hsu, {Sheng Chia} and Huang, {Wen Tsung} and Yang, {Chin Min} and Chen, {Li Wen} and Sheng-Yuan Chu",
year = "2013",
month = "8",
day = "9",
language = "English",
isbn = "9781482205817",
series = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",
pages = "147--150",
booktitle = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",

}

Chen, CH, Li, Y, Chen, YY, Chen, CY, Hsu, SC, Huang, WT, Yang, CM, Chen, LW & Chu, S-Y 2013, Narrow fin width effect of HKMG bulk FinFET devices. in Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, vol. 1, pp. 147-150, Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, Washington, DC, United States, 13-05-12.

Narrow fin width effect of HKMG bulk FinFET devices. / Chen, Chien Hung; Li, Yiming; Chen, Yu Yu; Chen, Chieh Yang; Hsu, Sheng Chia; Huang, Wen Tsung; Yang, Chin Min; Chen, Li Wen; Chu, Sheng-Yuan.

Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. 2013. p. 147-150 (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Huang, Wen Tsung

AU - Yang, Chin Min

AU - Chen, Li Wen

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N2 - In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.

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Chen CH, Li Y, Chen YY, Chen CY, Hsu SC, Huang WT et al. Narrow fin width effect of HKMG bulk FinFET devices. In Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. 2013. p. 147-150. (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013).