Near-infrared photodetector with CuIn1-x AlxSe 2 thin film

Ruo Ping Chang; Dung Ching Perng

doi:10.1063/1.3627185

Near-infrared photodetector with CuIn_1-x Al_xSe ₂ thin film

Ruo Ping Chang, Dung Ching Perng

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Application of the CuInSe₂-based thin film for a near-infrared (NIR) photodetector (PD) has been demonstrated. The Cu(In,Al)Se₂ (CIAS) was used as an absorption layer for NIR PD with comb-structured Al electrodes. X-ray diffraction spectrum and scanning electron microscope (SEM) micrographs show that the CIAS film is a single phased polycrystalline film with smooth surface and super large (2-5 m) grains. Low temperature photoluminescence analysis indicates that the CIAS has a strong NIR excitation emission peak. The CIAS PDs are highly sensitive to the NIR spectrum with cut-off frequency near 790 nm and demonstrate four-orders of magnitude in photocurrent amplification.

Original language	English
Article number	081103
Journal	Applied Physics Letters
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.3627185
Publication status	Published - 2011 Aug 22

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3627185

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title = "Near-infrared photodetector with CuIn1-x AlxSe 2 thin film",

abstract = "Application of the CuInSe2-based thin film for a near-infrared (NIR) photodetector (PD) has been demonstrated. The Cu(In,Al)Se2 (CIAS) was used as an absorption layer for NIR PD with comb-structured Al electrodes. X-ray diffraction spectrum and scanning electron microscope (SEM) micrographs show that the CIAS film is a single phased polycrystalline film with smooth surface and super large (2-5 m) grains. Low temperature photoluminescence analysis indicates that the CIAS has a strong NIR excitation emission peak. The CIAS PDs are highly sensitive to the NIR spectrum with cut-off frequency near 790 nm and demonstrate four-orders of magnitude in photocurrent amplification.",

author = "Chang, {Ruo Ping} and Perng, {Dung Ching}",

note = "Funding Information: The authors would like to thank Taiwan{\textquoteright}s National Science Foundation for the financial supports under Contract No. NSC 99-2221-E-006-138.",

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AU - Chang, Ruo Ping

AU - Perng, Dung Ching

N1 - Funding Information: The authors would like to thank Taiwan’s National Science Foundation for the financial supports under Contract No. NSC 99-2221-E-006-138.

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N2 - Application of the CuInSe2-based thin film for a near-infrared (NIR) photodetector (PD) has been demonstrated. The Cu(In,Al)Se2 (CIAS) was used as an absorption layer for NIR PD with comb-structured Al electrodes. X-ray diffraction spectrum and scanning electron microscope (SEM) micrographs show that the CIAS film is a single phased polycrystalline film with smooth surface and super large (2-5 m) grains. Low temperature photoluminescence analysis indicates that the CIAS has a strong NIR excitation emission peak. The CIAS PDs are highly sensitive to the NIR spectrum with cut-off frequency near 790 nm and demonstrate four-orders of magnitude in photocurrent amplification.

AB - Application of the CuInSe2-based thin film for a near-infrared (NIR) photodetector (PD) has been demonstrated. The Cu(In,Al)Se2 (CIAS) was used as an absorption layer for NIR PD with comb-structured Al electrodes. X-ray diffraction spectrum and scanning electron microscope (SEM) micrographs show that the CIAS film is a single phased polycrystalline film with smooth surface and super large (2-5 m) grains. Low temperature photoluminescence analysis indicates that the CIAS has a strong NIR excitation emission peak. The CIAS PDs are highly sensitive to the NIR spectrum with cut-off frequency near 790 nm and demonstrate four-orders of magnitude in photocurrent amplification.

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Near-infrared photodetector with CuIn_1-x Al_xSe ₂ thin film

Abstract

All Science Journal Classification (ASJC) codes

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