Abstract
Application of the CuInSe2-based thin film for a near-infrared (NIR) photodetector (PD) has been demonstrated. The Cu(In,Al)Se2 (CIAS) was used as an absorption layer for NIR PD with comb-structured Al electrodes. X-ray diffraction spectrum and scanning electron microscope (SEM) micrographs show that the CIAS film is a single phased polycrystalline film with smooth surface and super large (2-5 m) grains. Low temperature photoluminescence analysis indicates that the CIAS has a strong NIR excitation emission peak. The CIAS PDs are highly sensitive to the NIR spectrum with cut-off frequency near 790 nm and demonstrate four-orders of magnitude in photocurrent amplification.
Original language | English |
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Article number | 081103 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2011 Aug 22 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)