Near-infrared photodetector with CuIn1-x AlxSe 2 thin film

Ruo Ping Chang, Dung Ching Perng

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23 Citations (Scopus)

Abstract

Application of the CuInSe2-based thin film for a near-infrared (NIR) photodetector (PD) has been demonstrated. The Cu(In,Al)Se2 (CIAS) was used as an absorption layer for NIR PD with comb-structured Al electrodes. X-ray diffraction spectrum and scanning electron microscope (SEM) micrographs show that the CIAS film is a single phased polycrystalline film with smooth surface and super large (2-5 m) grains. Low temperature photoluminescence analysis indicates that the CIAS has a strong NIR excitation emission peak. The CIAS PDs are highly sensitive to the NIR spectrum with cut-off frequency near 790 nm and demonstrate four-orders of magnitude in photocurrent amplification.

Original languageEnglish
Article number081103
JournalApplied Physics Letters
Volume99
Issue number8
DOIs
Publication statusPublished - 2011 Aug 22

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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