@inproceedings{698f325a3f0349ada18d8284e521366b,
title = "Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs",
abstract = "Barium-doped TiO2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10-9 A/cm2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher ION/IOFF ratio (4.5 × 105) are obtained.",
author = "Hu, {Chih Chun} and Lin, {Mon Sen} and Wu, {Tsu Yi} and Feri Adriyanto and Sze, {Po Wen} and Wu, {Chang Luen} and Wang, {Yeong Her}",
year = "2011",
doi = "10.1149/1.3633059",
language = "English",
isbn = "9781566779036",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "439--444",
booktitle = "Physics and Technology of High-k Materials 9",
edition = "3",
note = "9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting ; Conference date: 10-10-2011 Through 12-10-2011",
}