Abstract
Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.
| Original language | English |
|---|---|
| Title of host publication | Physics and Technology of High-k Materials 9 |
| Pages | 439-444 |
| Number of pages | 6 |
| Edition | 3 |
| DOIs | |
| Publication status | Published - 2011 Dec 1 |
| Event | 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States Duration: 2011 Oct 10 → 2011 Oct 12 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 3 |
| Volume | 41 |
| ISSN (Print) | 1938-5862 |
| ISSN (Electronic) | 1938-6737 |
Other
| Other | 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11-10-10 → 11-10-12 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
}
Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. / Hu, Chih Chun; Lin, Mon Sen; Wu, Tsu Yi; Adriyanto, Feri; Sze, Po Wen; Wu, Chang Luen; Wang, Yeong-Her.
Physics and Technology of High-k Materials 9. 3. ed. 2011. p. 439-444 (ECS Transactions; Vol. 41, No. 3).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs
AU - Hu, Chih Chun
AU - Lin, Mon Sen
AU - Wu, Tsu Yi
AU - Adriyanto, Feri
AU - Sze, Po Wen
AU - Wu, Chang Luen
AU - Wang, Yeong-Her
PY - 2011/12/1
Y1 - 2011/12/1
N2 - Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.
AB - Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.
UR - http://www.scopus.com/inward/record.url?scp=84863171294&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863171294&partnerID=8YFLogxK
U2 - 10.1149/1.3633059
DO - 10.1149/1.3633059
M3 - Conference contribution
SN - 9781566779036
T3 - ECS Transactions
SP - 439
EP - 444
BT - Physics and Technology of High-k Materials 9
ER -