Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs

Chih Chun Hu, Mon Sen Lin, Tsu Yi Wu, Feri Adriyanto, Po Wen Sze, Chang Luen Wu, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Barium-doped TiO2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10-9 A/cm2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher ION/IOFF ratio (4.5 × 105) are obtained.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 9
PublisherElectrochemical Society Inc.
Pages439-444
Number of pages6
Edition3
ISBN (Electronic)9781607682578
ISBN (Print)9781566779036
DOIs
Publication statusPublished - 2011
Event9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 102011 Oct 12

Publication series

NameECS Transactions
Number3
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
Country/TerritoryUnited States
CityBoston, MA
Period11-10-1011-10-12

All Science Journal Classification (ASJC) codes

  • General Engineering

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