Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs

Chih Chun Hu, Mon Sen Lin, Tsu Yi Wu, Feri Adriyanto, Po Wen Sze, Chang Luen Wu, Yeong-Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 9
Pages439-444
Number of pages6
Edition3
DOIs
Publication statusPublished - 2011 Dec 1
Event9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 102011 Oct 12

Publication series

NameECS Transactions
Number3
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11-10-1011-10-12

Fingerprint

High electron mobility transistors
Barium
Liquids
Current density
Metals
Gate dielectrics
Drain current
Leakage currents
Temperature
Electric potential
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hu, C. C., Lin, M. S., Wu, T. Y., Adriyanto, F., Sze, P. W., Wu, C. L., & Wang, Y-H. (2011). Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. In Physics and Technology of High-k Materials 9 (3 ed., pp. 439-444). (ECS Transactions; Vol. 41, No. 3). https://doi.org/10.1149/1.3633059
Hu, Chih Chun ; Lin, Mon Sen ; Wu, Tsu Yi ; Adriyanto, Feri ; Sze, Po Wen ; Wu, Chang Luen ; Wang, Yeong-Her. / Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. Physics and Technology of High-k Materials 9. 3. ed. 2011. pp. 439-444 (ECS Transactions; 3).
@inproceedings{698f325a3f0349ada18d8284e521366b,
title = "Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs",
abstract = "Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.",
author = "Hu, {Chih Chun} and Lin, {Mon Sen} and Wu, {Tsu Yi} and Feri Adriyanto and Sze, {Po Wen} and Wu, {Chang Luen} and Yeong-Her Wang",
year = "2011",
month = "12",
day = "1",
doi = "10.1149/1.3633059",
language = "English",
isbn = "9781566779036",
series = "ECS Transactions",
number = "3",
pages = "439--444",
booktitle = "Physics and Technology of High-k Materials 9",
edition = "3",

}

Hu, CC, Lin, MS, Wu, TY, Adriyanto, F, Sze, PW, Wu, CL & Wang, Y-H 2011, Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. in Physics and Technology of High-k Materials 9. 3 edn, ECS Transactions, no. 3, vol. 41, pp. 439-444, 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting, Boston, MA, United States, 11-10-10. https://doi.org/10.1149/1.3633059

Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. / Hu, Chih Chun; Lin, Mon Sen; Wu, Tsu Yi; Adriyanto, Feri; Sze, Po Wen; Wu, Chang Luen; Wang, Yeong-Her.

Physics and Technology of High-k Materials 9. 3. ed. 2011. p. 439-444 (ECS Transactions; Vol. 41, No. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs

AU - Hu, Chih Chun

AU - Lin, Mon Sen

AU - Wu, Tsu Yi

AU - Adriyanto, Feri

AU - Sze, Po Wen

AU - Wu, Chang Luen

AU - Wang, Yeong-Her

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.

AB - Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the metal-oxide-semiconductor (MOS) structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing, a lower sub-threshold swing (112mV/dec), and a higher I ON/I OFF ratio (4.5 × 10 5) are obtained.

UR - http://www.scopus.com/inward/record.url?scp=84863171294&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863171294&partnerID=8YFLogxK

U2 - 10.1149/1.3633059

DO - 10.1149/1.3633059

M3 - Conference contribution

SN - 9781566779036

T3 - ECS Transactions

SP - 439

EP - 444

BT - Physics and Technology of High-k Materials 9

ER -

Hu CC, Lin MS, Wu TY, Adriyanto F, Sze PW, Wu CL et al. Near room-temperature liquid-phase deposition of barium-doped TiO 2 on n-GaN and its application to AlGaN/GaN MOSHEMTs. In Physics and Technology of High-k Materials 9. 3 ed. 2011. p. 439-444. (ECS Transactions; 3). https://doi.org/10.1149/1.3633059