Near-room-temperature selective oxidation on GaAs using photoresist as a mask

Selective oxidation on GaAs operated at near room temperature, by a liquid phase chemically enhanced method using photoresist as a mask, is proposed and demonstrated. Because of the low temperature and electroless features of the oxidation method, the process is simple, economic and reliable. Good electrical insulating properties comparable with those of thermal oxide have been obtained. According to the results of X-ray photoelectron spectroscopy, the chemistry of the oxide surface is stable after thermal annealing. The thermal stability shows the potential for device fabrication.