Near-room-temperature selective oxidation on GaAs using photoresist as a mask

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Selective oxidation on GaAs operated at near room temperature, by a liquid phase chemically enhanced method using photoresist as a mask, is proposed and demonstrated. Because of the low temperature and electroless features of the oxidation method, the process is simple, economic and reliable. Good electrical insulating properties comparable with those of thermal oxide have been obtained. According to the results of X-ray photoelectron spectroscopy, the chemistry of the oxide surface is stable after thermal annealing. The thermal stability shows the potential for device fabrication.

Original languageEnglish
Pages (from-to)L988-L990
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number8 SUPPL. B
Publication statusPublished - 1998 Aug 15

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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