Negative bias temperature instability characteristics of strained SiGe pMOSFETs

C. H. Lee, S. L. Wu, S. H. Chen, C. W. Kuo, Y. M. Lin, J. F. Chen, S. J. Chang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Investigation of the negative bias temperature instability (NBTI) mechanism of a strained Si0.7Ge0.3 pMOSFET with 30nm tetraetho oxysilane (TEOS) oxide is presented. Because the carriers are confined in the buried SiGe channel, less threshold voltage shift and smaller drain current degradation are found in a strained SiGe pMOSFET compared to the Si control counterpart. Further, data of thermal active energy (Ea) are in agreement with the reaction-diffusion model. Our findings reveal that the strained Si 0.7Ge0.3 pMOSFET has improved electrical properties and NBTI immunity because of less drain current degradation, less threshold voltage shift and longer lifetime.

Original languageEnglish
Pages (from-to)835-836
Number of pages2
JournalElectronics Letters
Volume43
Issue number15
DOIs
Publication statusPublished - 2007 Aug 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Negative bias temperature instability characteristics of strained SiGe pMOSFETs'. Together they form a unique fingerprint.

Cite this