Negative bias temperature instability characteristics of strained SiGe pMOSFETs

C. H. Lee; S. L. Wu; S. H. Chen; C. W. Kuo; Y. M. Lin; J. F. Chen; S. J. Chang

doi:10.1049/el:20071064

Negative bias temperature instability characteristics of strained SiGe pMOSFETs

C. H. Lee, S. L. Wu, S. H. Chen, C. W. Kuo, Y. M. Lin, J. F. Chen, S. J. Chang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Investigation of the negative bias temperature instability (NBTI) mechanism of a strained Si_0.7Ge_0.3 pMOSFET with 30nm tetraetho oxysilane (TEOS) oxide is presented. Because the carriers are confined in the buried SiGe channel, less threshold voltage shift and smaller drain current degradation are found in a strained SiGe pMOSFET compared to the Si control counterpart. Further, data of thermal active energy (Ea) are in agreement with the reaction-diffusion model. Our findings reveal that the strained Si _0.7Ge_0.3 pMOSFET has improved electrical properties and NBTI immunity because of less drain current degradation, less threshold voltage shift and longer lifetime.

Original language	English
Pages (from-to)	835-836
Number of pages	2
Journal	Electronics Letters
Volume	43
Issue number	15
DOIs	https://doi.org/10.1049/el:20071064
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1049/el:20071064

Cite this

@article{5b9f85e936b1400d951e8ba13d846ade,

title = "Negative bias temperature instability characteristics of strained SiGe pMOSFETs",

abstract = "Investigation of the negative bias temperature instability (NBTI) mechanism of a strained Si0.7Ge0.3 pMOSFET with 30nm tetraetho oxysilane (TEOS) oxide is presented. Because the carriers are confined in the buried SiGe channel, less threshold voltage shift and smaller drain current degradation are found in a strained SiGe pMOSFET compared to the Si control counterpart. Further, data of thermal active energy (Ea) are in agreement with the reaction-diffusion model. Our findings reveal that the strained Si 0.7Ge0.3 pMOSFET has improved electrical properties and NBTI immunity because of less drain current degradation, less threshold voltage shift and longer lifetime.",

author = "Lee, {C. H.} and Wu, {S. L.} and Chen, {S. H.} and Kuo, {C. W.} and Lin, {Y. M.} and Chen, {J. F.} and Chang, {S. J.}",

year = "2007",

doi = "10.1049/el:20071064",

language = "English",

volume = "43",

pages = "835--836",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "15",

}

TY - JOUR

T1 - Negative bias temperature instability characteristics of strained SiGe pMOSFETs

AU - Lee, C. H.

AU - Wu, S. L.

AU - Chen, S. H.

AU - Kuo, C. W.

AU - Lin, Y. M.

AU - Chen, J. F.

AU - Chang, S. J.

PY - 2007

Y1 - 2007

N2 - Investigation of the negative bias temperature instability (NBTI) mechanism of a strained Si0.7Ge0.3 pMOSFET with 30nm tetraetho oxysilane (TEOS) oxide is presented. Because the carriers are confined in the buried SiGe channel, less threshold voltage shift and smaller drain current degradation are found in a strained SiGe pMOSFET compared to the Si control counterpart. Further, data of thermal active energy (Ea) are in agreement with the reaction-diffusion model. Our findings reveal that the strained Si 0.7Ge0.3 pMOSFET has improved electrical properties and NBTI immunity because of less drain current degradation, less threshold voltage shift and longer lifetime.

AB - Investigation of the negative bias temperature instability (NBTI) mechanism of a strained Si0.7Ge0.3 pMOSFET with 30nm tetraetho oxysilane (TEOS) oxide is presented. Because the carriers are confined in the buried SiGe channel, less threshold voltage shift and smaller drain current degradation are found in a strained SiGe pMOSFET compared to the Si control counterpart. Further, data of thermal active energy (Ea) are in agreement with the reaction-diffusion model. Our findings reveal that the strained Si 0.7Ge0.3 pMOSFET has improved electrical properties and NBTI immunity because of less drain current degradation, less threshold voltage shift and longer lifetime.

UR - http://www.scopus.com/inward/record.url?scp=34547221460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547221460&partnerID=8YFLogxK

U2 - 10.1049/el:20071064

DO - 10.1049/el:20071064

M3 - Article

AN - SCOPUS:34547221460

SN - 0013-5194

VL - 43

SP - 835

EP - 836

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Negative bias temperature instability characteristics of strained SiGe pMOSFETs

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this