Negative Differential Resistan ce of a Delta-Doping-Induced Double-Barrier Quantum-Well Diode at Room Temperature

R. L. Wang; Yan Kuin Su; Y. H. Wang; K. F. Yarn

doi:10.1109/55.62985

Negative Differential Resistan ce of a Delta-Doping-Induced Double-Barrier Quantum-Well Diode at Room Temperature

R. L. Wang, Yan Kuin Su, Y. H. Wang, K. F. Yarn

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this letter, we propose and demonstrate a novel resonant-tunneling homojunction diode, which is a delta-doping-induced double-barrier quantum-well (D3BQW) diode. The barrier uses the δn+-i-δp+-i-δn+ structure. The current-voltage (I−V) characteristics exhibit three sections of negative differential resistance (NDR) phenomena. At low bias, an N-type NDR is demonstrated due to the resonant-tunneling effect. At higher bias, another N-type NDR appears due to the heating effect in the high electric field. As the external bias increases further, an S-type NDR is observed. This result is attributed to the impact ionization effect of thermionic electrons and then trapping of holes in the maxima of the valence bands, which results in barrier lowering and redistribution of voltage.

Original language	English
Pages (from-to)	428-430
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	11
Issue number	10
DOIs	https://doi.org/10.1109/55.62985
Publication status	Published - 1990 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.62985

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@article{e0dc9ca6086b4009bfe3ca12951f2b8c,

title = "Negative Differential Resistan ce of a Delta-Doping-Induced Double-Barrier Quantum-Well Diode at Room Temperature",

abstract = "In this letter, we propose and demonstrate a novel resonant-tunneling homojunction diode, which is a delta-doping-induced double-barrier quantum-well (D3BQW) diode. The barrier uses the δn+-i-δp+-i-δn+ structure. The current-voltage (I−V) characteristics exhibit three sections of negative differential resistance (NDR) phenomena. At low bias, an N-type NDR is demonstrated due to the resonant-tunneling effect. At higher bias, another N-type NDR appears due to the heating effect in the high electric field. As the external bias increases further, an S-type NDR is observed. This result is attributed to the impact ionization effect of thermionic electrons and then trapping of holes in the maxima of the valence bands, which results in barrier lowering and redistribution of voltage.",

author = "Wang, {R. L.} and Su, {Yan Kuin} and Wang, {Y. H.} and Yarn, {K. F.}",

note = "Funding Information: Manuscript received May 31, 1990. This work was supported by the National Science Council, Republic of China, under Contract NSC 79- 01417-E006-04. The authors are with the Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China. IEEE Log Number 9038485.",

year = "1990",

month = oct,

doi = "10.1109/55.62985",

language = "English",

volume = "11",

pages = "428--430",

journal = "IEEE Electron Device Letters",

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T1 - Negative Differential Resistan ce of a Delta-Doping-Induced Double-Barrier Quantum-Well Diode at Room Temperature

AU - Wang, R. L.

AU - Su, Yan Kuin

AU - Wang, Y. H.

AU - Yarn, K. F.

N1 - Funding Information: Manuscript received May 31, 1990. This work was supported by the National Science Council, Republic of China, under Contract NSC 79- 01417-E006-04. The authors are with the Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China. IEEE Log Number 9038485.

PY - 1990/10

Y1 - 1990/10

N2 - In this letter, we propose and demonstrate a novel resonant-tunneling homojunction diode, which is a delta-doping-induced double-barrier quantum-well (D3BQW) diode. The barrier uses the δn+-i-δp+-i-δn+ structure. The current-voltage (I−V) characteristics exhibit three sections of negative differential resistance (NDR) phenomena. At low bias, an N-type NDR is demonstrated due to the resonant-tunneling effect. At higher bias, another N-type NDR appears due to the heating effect in the high electric field. As the external bias increases further, an S-type NDR is observed. This result is attributed to the impact ionization effect of thermionic electrons and then trapping of holes in the maxima of the valence bands, which results in barrier lowering and redistribution of voltage.

AB - In this letter, we propose and demonstrate a novel resonant-tunneling homojunction diode, which is a delta-doping-induced double-barrier quantum-well (D3BQW) diode. The barrier uses the δn+-i-δp+-i-δn+ structure. The current-voltage (I−V) characteristics exhibit three sections of negative differential resistance (NDR) phenomena. At low bias, an N-type NDR is demonstrated due to the resonant-tunneling effect. At higher bias, another N-type NDR appears due to the heating effect in the high electric field. As the external bias increases further, an S-type NDR is observed. This result is attributed to the impact ionization effect of thermionic electrons and then trapping of holes in the maxima of the valence bands, which results in barrier lowering and redistribution of voltage.

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Negative Differential Resistan ce of a Delta-Doping-Induced Double-Barrier Quantum-Well Diode at Room Temperature

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