In this letter, we show a novel GaAs delta-doping induced triangle-like double-barrier quantum well diode. The double barriers are induced by the δn + -i-δp + -i-δn + structure grown by delta-doping technique. The current-voltage characteristics exhibits two different types of negative differential resistance (NDR) at low and high bias, respectively. At low bias, N-type NDRs with peak-to-valley ratio 1.5 were observed due to resonant tunneling effect. An S-type NDR existed at high bias. This results from impact ionization in high electric field.
|Number of pages||3|
|Publication status||Published - 1990 Dec 1|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 1990 Aug 22 → 1990 Aug 24
|Other||22nd International Conference on Solid State Devices and Materials|
|Period||90-08-22 → 90-08-24|
All Science Journal Classification (ASJC) codes