Negative differential resistance in a novel GaAs delta-doping tunneling diode

Ruey Lue Wang, Yun Kuin Su, Yeong-Her Wang

Research output: Contribution to conferencePaper

Abstract

In this letter, we show a novel GaAs delta-doping induced triangle-like double-barrier quantum well diode. The double barriers are induced by the δn + -i-δp + -i-δn + structure grown by delta-doping technique. The current-voltage characteristics exhibits two different types of negative differential resistance (NDR) at low and high bias, respectively. At low bias, N-type NDRs with peak-to-valley ratio 1.5 were observed due to resonant tunneling effect. An S-type NDR existed at high bias. This results from impact ionization in high electric field.

Original languageEnglish
Pages27-29
Number of pages3
Publication statusPublished - 1990 Dec 1
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90-08-2290-08-24

Fingerprint

Diodes
Doping (additives)
Resonant tunneling
Impact ionization
Current voltage characteristics
Semiconductor quantum wells
Electric fields

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Wang, R. L., Su, Y. K., & Wang, Y-H. (1990). Negative differential resistance in a novel GaAs delta-doping tunneling diode. 27-29. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .
Wang, Ruey Lue ; Su, Yun Kuin ; Wang, Yeong-Her. / Negative differential resistance in a novel GaAs delta-doping tunneling diode. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .3 p.
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abstract = "In this letter, we show a novel GaAs delta-doping induced triangle-like double-barrier quantum well diode. The double barriers are induced by the δn + -i-δp + -i-δn + structure grown by delta-doping technique. The current-voltage characteristics exhibits two different types of negative differential resistance (NDR) at low and high bias, respectively. At low bias, N-type NDRs with peak-to-valley ratio 1.5 were observed due to resonant tunneling effect. An S-type NDR existed at high bias. This results from impact ionization in high electric field.",
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Wang, RL, Su, YK & Wang, Y-H 1990, 'Negative differential resistance in a novel GaAs delta-doping tunneling diode' Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, 90-08-22 - 90-08-24, pp. 27-29.

Negative differential resistance in a novel GaAs delta-doping tunneling diode. / Wang, Ruey Lue; Su, Yun Kuin; Wang, Yeong-Her.

1990. 27-29 Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .

Research output: Contribution to conferencePaper

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T1 - Negative differential resistance in a novel GaAs delta-doping tunneling diode

AU - Wang, Ruey Lue

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AU - Wang, Yeong-Her

PY - 1990/12/1

Y1 - 1990/12/1

N2 - In this letter, we show a novel GaAs delta-doping induced triangle-like double-barrier quantum well diode. The double barriers are induced by the δn + -i-δp + -i-δn + structure grown by delta-doping technique. The current-voltage characteristics exhibits two different types of negative differential resistance (NDR) at low and high bias, respectively. At low bias, N-type NDRs with peak-to-valley ratio 1.5 were observed due to resonant tunneling effect. An S-type NDR existed at high bias. This results from impact ionization in high electric field.

AB - In this letter, we show a novel GaAs delta-doping induced triangle-like double-barrier quantum well diode. The double barriers are induced by the δn + -i-δp + -i-δn + structure grown by delta-doping technique. The current-voltage characteristics exhibits two different types of negative differential resistance (NDR) at low and high bias, respectively. At low bias, N-type NDRs with peak-to-valley ratio 1.5 were observed due to resonant tunneling effect. An S-type NDR existed at high bias. This results from impact ionization in high electric field.

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Wang RL, Su YK, Wang Y-H. Negative differential resistance in a novel GaAs delta-doping tunneling diode. 1990. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .