Abstract
In this letter, we show a novel GaAs delta-doping induced triangle-like double-barrier quantum well diode. The double barriers are induced by the δn + -i-δp + -i-δn + structure grown by delta-doping technique. The current-voltage characteristics exhibits two different types of negative differential resistance (NDR) at low and high bias, respectively. At low bias, N-type NDRs with peak-to-valley ratio 1.5 were observed due to resonant tunneling effect. An S-type NDR existed at high bias. This results from impact ionization in high electric field.
| Original language | English |
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| Pages | 27-29 |
| Number of pages | 3 |
| Publication status | Published - 1990 Dec 1 |
| Event | 22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 1990 Aug 22 → 1990 Aug 24 |
Other
| Other | 22nd International Conference on Solid State Devices and Materials |
|---|---|
| City | Sendai, Jpn |
| Period | 90-08-22 → 90-08-24 |
All Science Journal Classification (ASJC) codes
- Engineering(all)