Negative differential resistance in a novel GaAs delta-doping tunneling diode

Ruey Lue Wang, Yun Kuin Su, Yeong-Her Wang

Research output: Contribution to conferencePaperpeer-review

Abstract

In this letter, we show a novel GaAs delta-doping induced triangle-like double-barrier quantum well diode. The double barriers are induced by the δn + -i-δp + -i-δn + structure grown by delta-doping technique. The current-voltage characteristics exhibits two different types of negative differential resistance (NDR) at low and high bias, respectively. At low bias, N-type NDRs with peak-to-valley ratio 1.5 were observed due to resonant tunneling effect. An S-type NDR existed at high bias. This results from impact ionization in high electric field.

Original languageEnglish
Pages27-29
Number of pages3
Publication statusPublished - 1990 Dec 1
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90-08-2290-08-24

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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