Negative differential resistance in gaas delta-doping tunneling diodes

Yan Kuin Su, Ruey Lue Wang, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this letter, we show GaAs double-barrier quantum well homostructure diodes. The barrier is induced by the δn+-i- δp+-i-δn+ or δn+ -i-δp+ -i-δp+-i-δn+ structure grown by the delta-doping technique. The conduction band diagram was simulated with the out-diffusion effect of delta-doping layers taken into consideration. The current-voltage characteristics exhibit the expected N-type negative differential resistance due to the resonant tunneling effect. The room-temperature peak-to-valley current ratios are 1.5 and 1.9 for the two studied devices, respectively.

Original languageEnglish
Pages (from-to)L292-L294
JournalJapanese Journal of Applied Physics
Volume30
Issue number2B
DOIs
Publication statusPublished - 1991 Feb

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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