In this letter, we show GaAs double-barrier quantum well homostructure diodes. The barrier is induced by the δn+-i- δp+-i-δn+ or δn+ -i-δp+ -i-δp+-i-δn+ structure grown by the delta-doping technique. The conduction band diagram was simulated with the out-diffusion effect of delta-doping layers taken into consideration. The current-voltage characteristics exhibit the expected N-type negative differential resistance due to the resonant tunneling effect. The room-temperature peak-to-valley current ratios are 1.5 and 1.9 for the two studied devices, respectively.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)