Negative differential resistance in gaas delta-doping tunneling diodes

Yan Kuin Su, Ruey Lue Wang, Yeong-Her Wang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this letter, we show GaAs double-barrier quantum well homostructure diodes. The barrier is induced by the δn + -i- δp + -i-δn + or δn + -i-δp + -i-δp + -i-δn + structure grown by the delta-doping technique. The conduction band diagram was simulated with the out-diffusion effect of delta-doping layers taken into consideration. The current-voltage characteristics exhibit the expected N-type negative differential resistance due to the resonant tunneling effect. The room-temperature peak-to-valley current ratios are 1.5 and 1.9 for the two studied devices, respectively.

Original languageEnglish
Pages (from-to)L292-L294
JournalJapanese Journal of Applied Physics
Volume30
Issue number2B
DOIs
Publication statusPublished - 1991 Jan 1

Fingerprint

Diodes
diodes
Doping (additives)
Resonant tunneling
resonant tunneling
Current voltage characteristics
Conduction bands
Semiconductor quantum wells
valleys
conduction bands
diagrams
quantum wells
electric potential
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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Negative differential resistance in gaas delta-doping tunneling diodes. / Su, Yan Kuin; Wang, Ruey Lue; Wang, Yeong-Her.

In: Japanese Journal of Applied Physics, Vol. 30, No. 2B, 01.01.1991, p. L292-L294.

Research output: Contribution to journalArticle

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AB - In this letter, we show GaAs double-barrier quantum well homostructure diodes. The barrier is induced by the δn + -i- δp + -i-δn + or δn + -i-δp + -i-δp + -i-δn + structure grown by the delta-doping technique. The conduction band diagram was simulated with the out-diffusion effect of delta-doping layers taken into consideration. The current-voltage characteristics exhibit the expected N-type negative differential resistance due to the resonant tunneling effect. The room-temperature peak-to-valley current ratios are 1.5 and 1.9 for the two studied devices, respectively.

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