A novel AlGaAs/GaAs superlattice-emitter transistor (SET) has been fabricated and investigated at low temperature. The proposed SET device exhibits significant double negative-differential-resistance (NDR) behavior with a high peak-to-valley current ratio due to tunneling through the ground band and the first excited band in the superlattice. In the transistor operation, a common-emitter current gain of over 60 and a collector offset voltage smaller than 0.2 V at 77 K have been obtained. Due to its excellent properties, especially when using GaAs-based material, the proposed SET can be used as a functional device which provides good potential for frequency multipliers and multiple-valued logic circuit applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)