Negative-differential-resistance (ndr) superlattice-emitter transistor

Wen Shiung Lour, Wen Chau Liu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A novel AlGaAs/GaAs superlattice-emitter transistor (SET) has been fabricated and investigated at low temperature. The proposed SET device exhibits significant double negative-differential-resistance (NDR) behavior with a high peak-to-valley current ratio due to tunneling through the ground band and the first excited band in the superlattice. In the transistor operation, a common-emitter current gain of over 60 and a collector offset voltage smaller than 0.2 V at 77 K have been obtained. Due to its excellent properties, especially when using GaAs-based material, the proposed SET can be used as a functional device which provides good potential for frequency multipliers and multiple-valued logic circuit applications.

Original languageEnglish
Pages (from-to)L564-L567
JournalJapanese Journal of Applied Physics
Volume30
Issue number4
DOIs
Publication statusPublished - 1991 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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