Neodymium-doped GaAs light-emitting diodes

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.

Original languageEnglish
Pages (from-to)4279-4281
Number of pages3
JournalJournal of Applied Physics
Volume78
Issue number6
DOIs
Publication statusPublished - 1995 Dec 1

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neodymium
light emitting diodes
diodes
semiconductor diodes
minority carriers
electrical faults
electroluminescence
quantum efficiency
electric potential
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Neodymium-doped GaAs light-emitting diodes",
abstract = "Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.",
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Neodymium-doped GaAs light-emitting diodes. / Chang, Shoou-Jinn.

In: Journal of Applied Physics, Vol. 78, No. 6, 01.12.1995, p. 4279-4281.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Neodymium-doped GaAs light-emitting diodes

AU - Chang, Shoou-Jinn

PY - 1995/12/1

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N2 - Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.

AB - Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.

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