Neodymium-doped GaAs light-emitting diodes

S. J. Chang

doi:10.1063/1.359827

Neodymium-doped GaAs light-emitting diodes

S. J. Chang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd³⁺ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd³⁺ ⁴F_3/2 state to the Nd³⁺ ⁴I_9/2, ⁴I_11/2, and ⁴I_13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10^-7.

Original language	English
Pages (from-to)	4279-4281
Number of pages	3
Journal	Journal of Applied Physics
Volume	78
Issue number	6
DOIs	https://doi.org/10.1063/1.359827
Publication status	Published - 1995 Dec 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.359827

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title = "Neodymium-doped GaAs light-emitting diodes",

abstract = "Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.",

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N2 - Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.

AB - Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.

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