Abstract
Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.
Original language | English |
---|---|
Pages (from-to) | 4279-4281 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 78 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1995 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)