Neodymium-doped GaAs light-emitting diodes

S. J. Chang

doi:10.1557/proc-422-351

Neodymium-doped GaAs light-emitting diodes

S. J. Chang

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into a GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd³⁺ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd³⁺ ⁴F_3/2 state to the Nd³⁺ ⁴I_9/2, ⁴I_11/2 and ⁴I_13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10^-7.

Original language	English
Pages (from-to)	351-355
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	422
DOIs	https://doi.org/10.1557/proc-422-351
Publication status	Published - 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 11

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Neodymium-doped GaAs light-emitting diodes",

abstract = "Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into a GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2 and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.",

author = "Chang, {S. J.}",

year = "1996",

doi = "10.1557/proc-422-351",

language = "English",

volume = "422",

pages = "351--355",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Neodymium-doped GaAs light-emitting diodes

AU - Chang, S. J.

PY - 1996

Y1 - 1996

N2 - Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into a GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2 and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.

AB - Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into a GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2 and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.

UR - http://www.scopus.com/inward/record.url?scp=0030388241&partnerID=8YFLogxK

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U2 - 10.1557/proc-422-351

DO - 10.1557/proc-422-351

M3 - Conference article

AN - SCOPUS:0030388241

VL - 422

SP - 351

EP - 355

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 11 April 1996

ER -

Neodymium-doped GaAs light-emitting diodes

Abstract

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