Neodymium-doped GaAs light-emitting diodes

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Abstract

Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into a GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2 and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10-7.

Original languageEnglish
Pages (from-to)351-355
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume422
DOIs
Publication statusPublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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