New a-IGZO Pixel Circuit Composed of Three Transistors and One Capacitor for Use in High-Speed-Scan AMOLED Displays

Chih Lung Lin, Fu Hsing Chen, Chia Che Hung, Po Syun Chen, Ming Yang Deng, Chun Ming Lu, Tzuen Hsi Huang

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

An amorphous indium-gallium-zinc-oxide (a-IGZO) pixel circuit with three transistors and one capacitor is proposed for use in high-speed-scan active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit can compensate for the threshold voltage shifts in both normally-off and normally-on a-IGZO TFTs. Based on the simulation results with ±1 V threshold voltage shifts of the driving TFT, the relative error rates of OLED currents are less than 4.46% for the entire range of data voltages (-9.9 V∼5 V).

Original languageEnglish
Article number7303874
Pages (from-to)1031-1034
Number of pages4
JournalJournal of Display Technology
Volume11
Issue number12
DOIs
Publication statusPublished - 2015 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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