New a-IGZO Pixel Circuit Composed of Three Transistors and One Capacitor for Use in High-Speed-Scan AMOLED Displays

Chih Lung Lin, Fu Hsing Chen, Chia Che Hung, Po Syun Chen, Ming Yang Deng, Chun Ming Lu, Tzuen Hsi Huang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

An amorphous indium-gallium-zinc-oxide (a-IGZO) pixel circuit with three transistors and one capacitor is proposed for use in high-speed-scan active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit can compensate for the threshold voltage shifts in both normally-off and normally-on a-IGZO TFTs. Based on the simulation results with ±1 V threshold voltage shifts of the driving TFT, the relative error rates of OLED currents are less than 4.46% for the entire range of data voltages (-9.9 V∼5 V).

Original languageEnglish
Article number7303874
Pages (from-to)1031-1034
Number of pages4
JournalJournal of Display Technology
Volume11
Issue number12
DOIs
Publication statusPublished - 2015 Dec

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Organic light emitting diodes (OLED)
Zinc oxide
Threshold voltage
threshold voltage
zinc oxides
indium
capacitors
Transistors
Capacitors
transistors
light emitting diodes
Pixels
pixels
Display devices
high speed
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lin, Chih Lung ; Chen, Fu Hsing ; Hung, Chia Che ; Chen, Po Syun ; Deng, Ming Yang ; Lu, Chun Ming ; Huang, Tzuen Hsi. / New a-IGZO Pixel Circuit Composed of Three Transistors and One Capacitor for Use in High-Speed-Scan AMOLED Displays. In: Journal of Display Technology. 2015 ; Vol. 11, No. 12. pp. 1031-1034.
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abstract = "An amorphous indium-gallium-zinc-oxide (a-IGZO) pixel circuit with three transistors and one capacitor is proposed for use in high-speed-scan active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit can compensate for the threshold voltage shifts in both normally-off and normally-on a-IGZO TFTs. Based on the simulation results with ±1 V threshold voltage shifts of the driving TFT, the relative error rates of OLED currents are less than 4.46{\%} for the entire range of data voltages (-9.9 V∼5 V).",
author = "Lin, {Chih Lung} and Chen, {Fu Hsing} and Hung, {Chia Che} and Chen, {Po Syun} and Deng, {Ming Yang} and Lu, {Chun Ming} and Huang, {Tzuen Hsi}",
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New a-IGZO Pixel Circuit Composed of Three Transistors and One Capacitor for Use in High-Speed-Scan AMOLED Displays. / Lin, Chih Lung; Chen, Fu Hsing; Hung, Chia Che; Chen, Po Syun; Deng, Ming Yang; Lu, Chun Ming; Huang, Tzuen Hsi.

In: Journal of Display Technology, Vol. 11, No. 12, 7303874, 12.2015, p. 1031-1034.

Research output: Contribution to journalArticle

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AB - An amorphous indium-gallium-zinc-oxide (a-IGZO) pixel circuit with three transistors and one capacitor is proposed for use in high-speed-scan active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit can compensate for the threshold voltage shifts in both normally-off and normally-on a-IGZO TFTs. Based on the simulation results with ±1 V threshold voltage shifts of the driving TFT, the relative error rates of OLED currents are less than 4.46% for the entire range of data voltages (-9.9 V∼5 V).

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