Abstract
This work presents a gate driver circuit using indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The proposed circuit suppresses the threshold voltage shifts and completely turns off the a-IGZO TFTs having negative threshold voltage Simulation results reveal the proposed gate driver circuit can stably operate with a-IGZO TFT having negative threshold voltage.
| Original language | English |
|---|---|
| Title of host publication | 20th International Display Workshops 2013, IDW 2013 |
| Publisher | International Display Workshops |
| Pages | 361-363 |
| Number of pages | 3 |
| Volume | 1 |
| ISBN (Electronic) | 9781510827783 |
| Publication status | Published - 2013 |
| Event | 20th International Display Workshops 2013, IDW 2013 - Sapporo, Japan Duration: 2013 Dec 3 → 2013 Dec 6 |
Other
| Other | 20th International Display Workshops 2013, IDW 2013 |
|---|---|
| Country | Japan |
| City | Sapporo |
| Period | 13-12-03 → 13-12-06 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
Cite this
}
New a-IGZO TFT gate driver circuit with AC-driven pull-down circuit. / Wu, Chia En; Chen, Fu Hsing; Cheng, Mao Hsun; Lin, Chih-Lung.
20th International Display Workshops 2013, IDW 2013. Vol. 1 International Display Workshops, 2013. p. 361-363.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - New a-IGZO TFT gate driver circuit with AC-driven pull-down circuit
AU - Wu, Chia En
AU - Chen, Fu Hsing
AU - Cheng, Mao Hsun
AU - Lin, Chih-Lung
PY - 2013
Y1 - 2013
N2 - This work presents a gate driver circuit using indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The proposed circuit suppresses the threshold voltage shifts and completely turns off the a-IGZO TFTs having negative threshold voltage Simulation results reveal the proposed gate driver circuit can stably operate with a-IGZO TFT having negative threshold voltage.
AB - This work presents a gate driver circuit using indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The proposed circuit suppresses the threshold voltage shifts and completely turns off the a-IGZO TFTs having negative threshold voltage Simulation results reveal the proposed gate driver circuit can stably operate with a-IGZO TFT having negative threshold voltage.
UR - http://www.scopus.com/inward/record.url?scp=85026204756&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85026204756&partnerID=8YFLogxK
M3 - Conference contribution
VL - 1
SP - 361
EP - 363
BT - 20th International Display Workshops 2013, IDW 2013
PB - International Display Workshops
ER -