New a-IGZO TFT gate driver circuit with AC-driven pull-down circuit

Chia En Wu, Fu Hsing Chen, Mao Hsun Cheng, Chih-Lung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents a gate driver circuit using indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The proposed circuit suppresses the threshold voltage shifts and completely turns off the a-IGZO TFTs having negative threshold voltage Simulation results reveal the proposed gate driver circuit can stably operate with a-IGZO TFT having negative threshold voltage.

Original languageEnglish
Title of host publication20th International Display Workshops 2013, IDW 2013
PublisherInternational Display Workshops
Pages361-363
Number of pages3
Volume1
ISBN (Electronic)9781510827783
Publication statusPublished - 2013
Event20th International Display Workshops 2013, IDW 2013 - Sapporo, Japan
Duration: 2013 Dec 32013 Dec 6

Other

Other20th International Display Workshops 2013, IDW 2013
CountryJapan
CitySapporo
Period13-12-0313-12-06

Fingerprint

Zinc Oxide
Indium
Thin film transistors
Threshold voltage
Networks (circuits)
Gallium
Zinc oxide
gallium oxide

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Wu, C. E., Chen, F. H., Cheng, M. H., & Lin, C-L. (2013). New a-IGZO TFT gate driver circuit with AC-driven pull-down circuit. In 20th International Display Workshops 2013, IDW 2013 (Vol. 1, pp. 361-363). International Display Workshops.
Wu, Chia En ; Chen, Fu Hsing ; Cheng, Mao Hsun ; Lin, Chih-Lung. / New a-IGZO TFT gate driver circuit with AC-driven pull-down circuit. 20th International Display Workshops 2013, IDW 2013. Vol. 1 International Display Workshops, 2013. pp. 361-363
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abstract = "This work presents a gate driver circuit using indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The proposed circuit suppresses the threshold voltage shifts and completely turns off the a-IGZO TFTs having negative threshold voltage Simulation results reveal the proposed gate driver circuit can stably operate with a-IGZO TFT having negative threshold voltage.",
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Wu, CE, Chen, FH, Cheng, MH & Lin, C-L 2013, New a-IGZO TFT gate driver circuit with AC-driven pull-down circuit. in 20th International Display Workshops 2013, IDW 2013. vol. 1, International Display Workshops, pp. 361-363, 20th International Display Workshops 2013, IDW 2013, Sapporo, Japan, 13-12-03.

New a-IGZO TFT gate driver circuit with AC-driven pull-down circuit. / Wu, Chia En; Chen, Fu Hsing; Cheng, Mao Hsun; Lin, Chih-Lung.

20th International Display Workshops 2013, IDW 2013. Vol. 1 International Display Workshops, 2013. p. 361-363.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - This work presents a gate driver circuit using indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The proposed circuit suppresses the threshold voltage shifts and completely turns off the a-IGZO TFTs having negative threshold voltage Simulation results reveal the proposed gate driver circuit can stably operate with a-IGZO TFT having negative threshold voltage.

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Wu CE, Chen FH, Cheng MH, Lin C-L. New a-IGZO TFT gate driver circuit with AC-driven pull-down circuit. In 20th International Display Workshops 2013, IDW 2013. Vol. 1. International Display Workshops. 2013. p. 361-363