An amorphous indium-gallium-zinc oxide thin-film transistor (a- IGZO TFT) integrated gate driver with 33% ac driving structure and a new driving scheme for recovering the negative threshold voltage shift (VTH) is presented. The proposed circuit reduces the power consumption by fully turning off driving TFTs and lowers the gate-bias stress to prevent severe degradations of TFTs. Furthermore, the negative VTH shift of driving TFT is diminished by applying positive gate-bias stress. Simulation results illustrate that the proposed gate driver can be successfully operated with depletion-mode a-IGZO TFTs and the power consumption is estimated as 274.56 juW under the specification of 5.46-inch FHD panel.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Issue number||Book 3|
|Publication status||Published - 2015 Jun 1|
|Event||2015 SID International Symposium - San Jose, United States|
Duration: 2015 Jun 4 → …
All Science Journal Classification (ASJC) codes