New a-IGZO TFT gate driver circuit with threshold voltage shift recovery driving scheme

Chih Lung Lin, Chia En Wu, Ching En Lee

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

An amorphous indium-gallium-zinc oxide thin-film transistor (a- IGZO TFT) integrated gate driver with 33% ac driving structure and a new driving scheme for recovering the negative threshold voltage shift (VTH) is presented. The proposed circuit reduces the power consumption by fully turning off driving TFTs and lowers the gate-bias stress to prevent severe degradations of TFTs. Furthermore, the negative VTH shift of driving TFT is diminished by applying positive gate-bias stress. Simulation results illustrate that the proposed gate driver can be successfully operated with depletion-mode a-IGZO TFTs and the power consumption is estimated as 274.56 juW under the specification of 5.46-inch FHD panel.

Original languageEnglish
Pages (from-to)1293-1296
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue numberBook 3
DOIs
Publication statusPublished - 2015 Jun 1
Event2015 SID International Symposium - San Jose, United States
Duration: 2015 Jun 4 → …

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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