New AlGaAs/GaAs double heterostructure-emitter bipolar transistor prepared by molecular beam epitaxy

Wen-Chau Liu, Wen Shiung Lour, Der Feng Guo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new AlGaAs/GaAs double heterostructure-emitter bipolar transistor (DHEBT) prepared by molecular beam epitaxy (MBE) has been demonstrated. Due to the symmetric structure with respect to the base layer, the device would operate as a bi-directional transistor and switch. The common-emitter current gain for up to 18, with an offset voltage smaller than 0.1 V, is obtained. Furthermore, the undesired knee-shaped characteristics and the reachthrough effect observed in the conventional double heterojunction bipolar transistor (DHBT) are avoided. The bi-directional operations of this structure give a significant flexibility in the circuit applications. It is believed that with adequate adjustments on structural parameters, especially in the minimization of the base-collector junction area, a more symmetric and an improved electrical performance may be achieved.

Original languageEnglish
Pages (from-to)362-364
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number3
DOIs
Publication statusPublished - 1992 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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