New Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Optical Pixel Sensor for Optical Input Signal with Short Wavelength

Chia En Wu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Chih Lung Lin, Toshio Kamiya

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents an optical sensor based on amorphous In-Ga-Zn-O (a-IGZO) photo thin-film transistors (TFTs). To maintain a high signal-to-noise ratio (SNR) of the optical sensor against a variety of ambient white light, this paper employed a-IGZO photo-TFTs for detecting optical input signal sensitive only to short-wavelength light. Measurements of the photosensitivity for optical signal with different wavelengths and optical response for optical input signal under various white light irradiances are proposed to support the reliability of the a-IGZO photo-TFTs under different ambient white light conditions. This paper also simulates a-IGZO photo-TFTs under various white light conditions to predict and design the proposed new sensors and circuits. The simulation results indicated that the proposed optical sensor can maintain the obvious difference in the output voltages with or without optical input signal under the white light irradiances of 0, 268, and $750~\mu\text{W}$/cm2, demonstrating the feasibility and the reliability of the proposed optical pixel sensor.

Original languageEnglish
Article number8756231
Pages (from-to)3841-3846
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number9
DOIs
Publication statusPublished - 2019 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'New Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Optical Pixel Sensor for Optical Input Signal with Short Wavelength'. Together they form a unique fingerprint.

Cite this