New and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices

Wen Chau Liu, Kong Beng Thei, Wei Chou Wang, Hsi Jen Pan, Shou Gwo Wuu, Ming Ta Lei, Chung Shu Wang, Shiou Ying Cheng

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We demonstrate a new and improved borderless contact (BLC) Ti-salicide process for the fabrication of sub-quarter micron CMOS devices. A low-temperature chemical vapor deposition (CVD) SiOxNy film to act as the selective etching stop layer and the additional n+ and p+ source-drain double implant structure (DIS) are employed in the studied device. The additional n+ and p+ DIS can reduce the junction leakage current, which is usually enhanced by BLC etching near the edge of shallow trench isolation (STI). The process window is enlarged. Furthermore, the employed low-thermal oxynitride and high deposition rate can improve the salicide thermal stability and avoid the salicide agglomeration.

Original languageEnglish
Pages (from-to)344-346
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number7
DOIs
Publication statusPublished - 2000 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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