TY - JOUR
T1 - New dielectric material system of Nd(Mg1/2Ti1/2) O3-CaTiO3 at microwave frequency
AU - Huang, Cheng Liang
AU - Chen, Yuan Bin
AU - Lin, Shih Hung
N1 - Funding Information:
The authors would like to thank the National Science Council of the Republic of China, Taiwan for financially supporting this research under Contract No. NSC-93-2213-E-006-038.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/12
Y1 - 2005/12
N2 - The microwave dielectric properties of (1 - x)CaTiO3-xNd(Mg 1/2Ti1/2)O3 (0.1 ≤ x ≤ 1.0) ceramics prepared by the conventional solid state method have been investigated. The system forms a solid solution throughout the entire compositional range. The dielectric constant decreases from 152 to 27 as x varies from 0.1 to 1.0. In the (1 - x)CaTiO3-xNd(Mg1/2Ti1/2)O3 system, the microwave dielectric properties can be effectively controlled by varying the x value. At 1400 °C, 0.1CaTiO3-0.9Nd(Mg 1/2Ti1/2)O3 has a dielectric constant (εr) of 42, a Q × f value of 35 000 GHz and a temperature coefficient of resonant frequency (τf) of -10 ppm/°C. As the content of Nd(Mg1/2Ti1/2)O3 increases, the highest Q × f value of 43 000 GHz for x = 0.9 is achieved at the sintering temperature 1500 °C.
AB - The microwave dielectric properties of (1 - x)CaTiO3-xNd(Mg 1/2Ti1/2)O3 (0.1 ≤ x ≤ 1.0) ceramics prepared by the conventional solid state method have been investigated. The system forms a solid solution throughout the entire compositional range. The dielectric constant decreases from 152 to 27 as x varies from 0.1 to 1.0. In the (1 - x)CaTiO3-xNd(Mg1/2Ti1/2)O3 system, the microwave dielectric properties can be effectively controlled by varying the x value. At 1400 °C, 0.1CaTiO3-0.9Nd(Mg 1/2Ti1/2)O3 has a dielectric constant (εr) of 42, a Q × f value of 35 000 GHz and a temperature coefficient of resonant frequency (τf) of -10 ppm/°C. As the content of Nd(Mg1/2Ti1/2)O3 increases, the highest Q × f value of 43 000 GHz for x = 0.9 is achieved at the sintering temperature 1500 °C.
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U2 - 10.1016/j.sse.2005.08.009
DO - 10.1016/j.sse.2005.08.009
M3 - Article
AN - SCOPUS:28044456541
VL - 49
SP - 1921
EP - 1924
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 12
ER -