New field-effect resistive Pd/Oxide/AlGaAs hydrogen sensor based on pseudomorphic high electron mobility transistor

Ching Wen Hung, Han Lien Lin, Yan Ying Tsai, Po Hsien Lai, Ssu I. Fu, Huey Ing Chen, Wen Chau Liu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A new and interesting field-effect resistive hydrogen sensor that is based on a Pd/oxide/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structure, is fabricated and studied. A simple model is proposed to elucidate the hydrogen adsorption and sensing mechanisms. The reaction of the device studied with hydrogen gas results in a considerable decrease in channel resistance. The resistance curves of the hydrogen response demonstrate that this device shows good reversible, repeatable, and concentration-dependent properties. In comparison with other resistor-type hydrogen sensors, the device studied presents the significant advantages of high detection sensitivity (24.7% in 9970 ppm H2/air gas) and low detection limit (< 4.3 ppm H 2/air) at room temperature. Furthermore, the device studied exhibits small resistance (30 Ω) and small operating voltage (< 0.3 V). which are superior to those of other resistive sensors with typically larger resistances ranging from kiΩ to MΩ and voltages greater than 1 V.

Original languageEnglish
Pages (from-to)L780-L782
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number29-32
DOIs
Publication statusPublished - 2006 Aug 11

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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