TY - JOUR
T1 - New field-effect resistive Pd/Oxide/AlGaAs hydrogen sensor based on pseudomorphic high electron mobility transistor
AU - Hung, Ching Wen
AU - Lin, Han Lien
AU - Tsai, Yan Ying
AU - Lai, Po Hsien
AU - Fu, Ssu I.
AU - Chen, Huey Ing
AU - Liu, Wen Chau
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science and CuIture, Japan, which is gratefully acknowledged.
PY - 2006/8/11
Y1 - 2006/8/11
N2 - A new and interesting field-effect resistive hydrogen sensor that is based on a Pd/oxide/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structure, is fabricated and studied. A simple model is proposed to elucidate the hydrogen adsorption and sensing mechanisms. The reaction of the device studied with hydrogen gas results in a considerable decrease in channel resistance. The resistance curves of the hydrogen response demonstrate that this device shows good reversible, repeatable, and concentration-dependent properties. In comparison with other resistor-type hydrogen sensors, the device studied presents the significant advantages of high detection sensitivity (24.7% in 9970 ppm H2/air gas) and low detection limit (< 4.3 ppm H 2/air) at room temperature. Furthermore, the device studied exhibits small resistance (30 Ω) and small operating voltage (< 0.3 V). which are superior to those of other resistive sensors with typically larger resistances ranging from kiΩ to MΩ and voltages greater than 1 V.
AB - A new and interesting field-effect resistive hydrogen sensor that is based on a Pd/oxide/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structure, is fabricated and studied. A simple model is proposed to elucidate the hydrogen adsorption and sensing mechanisms. The reaction of the device studied with hydrogen gas results in a considerable decrease in channel resistance. The resistance curves of the hydrogen response demonstrate that this device shows good reversible, repeatable, and concentration-dependent properties. In comparison with other resistor-type hydrogen sensors, the device studied presents the significant advantages of high detection sensitivity (24.7% in 9970 ppm H2/air gas) and low detection limit (< 4.3 ppm H 2/air) at room temperature. Furthermore, the device studied exhibits small resistance (30 Ω) and small operating voltage (< 0.3 V). which are superior to those of other resistive sensors with typically larger resistances ranging from kiΩ to MΩ and voltages greater than 1 V.
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U2 - 10.1143/JJAP.45.L780
DO - 10.1143/JJAP.45.L780
M3 - Article
AN - SCOPUS:34249882358
SN - 0021-4922
VL - 45
SP - L780-L782
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 29-32
ER -